SEMI 3D1 - Terminology for Through Silicon via Geometrical Metrology

Volume(s): 3D-IC
Language: English
Type: Single Standards Download (.pdf)

Clear and commonly accepted definitions are needed for efficient communication and to prevent misunderstanding between buyers and vendors of metrology equipment and manufacturing services. The purpose of this Document is to provide a consistent terminology for the understanding and discussion of metrology issues important to through silicon vias (TSV).

The scope of this Document is limited to the definitions of terms used to specify measured quantities that characterize TSV. This Document does not describe measurement procedures, but rather attempts to define the measurands clearly, usefully, and unambiguously.


The focus of this Document is on geometry-related metrology and measurands important for definition and control of fabrication and inspection operations on structures that include openings for TSV.


This Document is intended for TSVs in silicon.


This Document does not attempt to discuss statistical considerations, which are covered in SEMI E89 and elsewhere.


This Document adapts structure and wording from other SEMI Documents, particularly SEMI P35.


Referenced SEMI Standards

SEMI E89 — Guide for Measurement System Analysis (MSA)
SEMI P35 — Terminology for Microlithography Metrology

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