3D00200 - SEMI 3D2 - Specification for Glass Carrier Wafers for 3DS-IC Applications

Volume(s): 3D-IC
Language: English
Type: Single Standards Download (.pdf)
Abstract


NOTICE: This Document was reapproved with minor editorial changes.

 

This Specification is intended to address the needs of the 3D Stacked IC (3DS-IC) industry by providing the tools needed to procure glass carrier wafers to be used in a 3DS-IC process.


This Specification describes dimensional, thermal, and wafer preparation characteristics for glass starting material that will be used as carrier wafers in a temporary bonded state.

 

This Specification describes glass carrier wafers with nominal diameters of 200 mm and 300 mm, and a thickness of 700 µm, although the wafer diameter and thickness required may vary due to process and functional variation. Such variations shall be clarified in the purchasing order or in the contract.

 

Methods of measurements suitable for determining the characteristics in the specifications are indicated.

 

Referenced SEMI Standards (purchase separately)

SEMI 3D12 — Guide for Measuring Flatness and Shape of Low Stiffness Wafers

SEMI E119 — Mechanical Specification for Reduced-Pitch Front-Opening Box for Interfactory Transport of 300 mm Wafers

SEMI G90 — Specification for 300 mm Wafer Coin-Stack Type Shipping Container Used for Test and Packaging Processes

SEMI M12 — Specification for Serial Alphanumeric Marking of the Front Surface of Wafers

SEMI M31 — Specification for Mechanical Features of Front-Opening Shipping Box Used to Transport and Ship 300 mm Wafers

SEMI M35 — Guide for Developing Specifications for Silicon Wafer Surface Features Detected by Automated Inspection

SEMI M40 — Guide for Measurement of Roughness of Planar Surfaces on Polished Wafers

SEMI M45 — Specification for 300 mm Wafer Shipping System

SEMI M59 — Terminology for Silicon Technology

SEMI MF533 — Test Method for Thickness and Thickness Variation of Silicon Wafers

SEMI MF657 — Test Method for Measuring Warp and Total Thickness Variation on Silicon Wafers by Noncontact Scanning (Withdrawn 0914)

SEMI MF671 — Test Method for Measuring Flat Length on Wafers of Silicon and Other Electronic Materials

SEMI MF928 — Test Method for Edge Contour of Circular Semiconductor Wafers and Rigid Disk Substrates

SEMI MF1152 — Test Method for Dimensions of Notches on Silicon Wafers

SEMI MF1390 — Test Method for Measuring Bow and Warp on Silicon Wafers by Automated Noncontact Scanning

SEMI MF1451 — Test Method for Measuring Sori on Silicon Wafers by Automated Noncontact Scanning

SEMI MF1530 — Test Method for Measuring Flatness, Thickness, and Total Thickness Variation on Silicon Wafers by Automated Noncontact Scanning

SEMI MF1617 — Test Method for Measuring Surface Sodium, Aluminum, Potassium, and Iron on Silicon and EPI Substrates by Secondary Ion Mass Spectrometry

SEMI MF2074 — Guide for Measuring Diameter of Silicon and Other Semiconductor Wafers

SEMI T7 — Specification for Back Surface Marking of Double-Side Polished Wafers with a Two-Dimensional Matrix Code Symbol

 

Revision History

SEMI 3D2-0216 (Reapproved 0222)

SEMI 3D2-0216 (technical revision)

SEMI 3D2-1113 (technical revision)

SEMI 3D2-0113 (first published)

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