SEMI 3D10 - Guide to Describing Materials Properties for Intermediate Wafers for Use in a 300 mm 3DS-IC Wafer Stack

Volume(s): 3D-IC
Language: English
Type: Single Standards Download (.pdf)

This Standard was technically approved by the 3DS-IC Global Technical Committee. This edition was approved for publication by the global Audits and Reviews Subcommittee on May 12, 2014. Available at and in August 2014.

This Guide is intended to address the needs of the 3D Stacked IC (3DS-IC) industry by providing the tools needed to procure processed wafers to be used in a 3DS-IC process.

This Guide provides the tools to describe individual wafers in a 3DS-IC process. In particular, this Document provides direction for describing the dimensions, materials, and devices for wafers that have undergone processing and are entering 3D stacking process steps. Since a 3D stacking process may include wafers from multiple fabrication facilities, it is important that this information is available to ensure additional process steps are performed correctly.

This Guide describes wafers and wafer stacks with nominal diameter of 300 mm and nominal thickness of 775 μm, although the actual wafer diameter and/or thickness may differ due to 3D stacking requirements and/or the effects of prior processing steps.

Referenced SEMI Standards

SEMI 3D2 — Specification for Glass Carrier Wafers for 3DS-IC Applications
SEMI M1 — Specifications for Polished Single Crystal Silicon Wafers
SEMI M45 — Specification for 300 mm Wafer Shipping System
SEMI M59 — Terminology for Silicon Technology
SEMI MF81 — Test Method for Measuring Radial Resistivity Variation on Silicon Wafers
SEMI MF951 — Test Method for Determination of Radial Interstitial Oxygen Variation in Silicon Wafers
SEMI MF1391 — Test Method for Substitutional Atomic Carbon Content of Silicon by Infrared Absorption
SEMI MF1530 — Test Method for Measuring Flatness, Thickness, and Total Thickness Variation on Silicon Wafers by Automated Noncontact Scanning

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