SEMI 3D13 - Guide for Measuring Voids in Bonded Wafer Stacks -
This Guide will assist users in selection and use of
bond-void metrology equipment and a protocol for performing bond-void
measurements based on their application. New bonding processes and applications
are sensitive to significantly smaller voids than bonding processes currently
used for 3DS-IC package sealing.
This Guide is based on experimental data on 300-mm diameter
silicon wafer pairs. The inspection and metrology tools covered include only
commercial instruments available in the 2012–2014 time frame. The wafer bonding
technique used was oxide bonding. The experimental data were provided by
volunteer participants in this study and have not been independently verified.
This Guide covers the purpose and results of the
experimental study. Detailed explanation of the principles of operation and
construction of the instruments used is beyond the scope of this Guide.
The potential and actual effects of bond voids on the
performance and reliability of fabricated devices are beyond the scope of this
The scope of this study does not extend to recommendations
as to which techniques may be less or more appropriate for particular
manufacturing processes, and no such recommendations are provided herein.
Referenced SEMI Standards (purchase separately)
SEMI 3D4 — Guide for Metrology for Measuring Thickness,
Total Thickness Variation (TTV), Warp/Sori, and Flatness of Bonded Wafer Stacks
SEMI M1 — Specification for Polished Single Crystal Silicon
SEMI 3D13-0715 (Reapproved 0222)
SEMI 3D13-0715 (first published)
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