SEMI 3D16 - Specification for Glass Base Material for Semiconductor Packaging -

Abstract

This Specification is intended to address the needs of the 3D Stacked IC (3DS-IC) industry by providing the tools needed to procure glass as base material to be used in a 3DS-IC process or in similar applications. Such glass may be specified with or without openings for through glass vias (TGV) or blind vias (BV).

This Specification describes dimensional and thermal characteristics of glass base material for interposers, RF devices, and other similar packaging substrates.

This Specification also applies to openings in glass.

The glass substrate is in shape of a wafer (round) or a panel (square or rectangular).

If present, the openings of the glass substrate may be intended to be further processed with metal fillings.

The glass substrate is intended to remain permanently in the package or device.

Methods of measurements suitable for determining the characteristics in this Specification are indicated.

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SEMI MF533 — Test Method for Thickness and Thickness Variation of Silicon Wafers
SEMI MF657 — Test Method for Measuring Warp and Total Thickness Variation on Silicon Wafers by Noncontact Scanning
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SEMI MF1451 — Test Method for Measuring Sori on Silicon Wafers by Automated Noncontact Scanning
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SEMI MF2074 — Guide for Measuring Diameter of Silicon and Other Semiconductor Wafers
SEMI MS1 — Guide to Specifying Wafer-Wafer Bonding Alignment Targets
SEMI T7 — Specification for Back Surface Marking of Double-sided Polished Wafers with a Two-Dimensional Matrix Code Symbol

Revision History
SEMI 3D16-0822 (technical revision)
SEMI 3D16-1116 (first published)

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