C10300 - SEMI C103 - Guide for Reporting Performance Parameters of the Chemical Mechanical Planarization (CMP) Conditioning Disks Used in Semiconductor Manufacturing
This Guide provides measurements and reporting of the parameters of disk aggressiveness, pad surface topography, disk surface topography and changes of the geometry of the disk features that are in contact with the pad during conditioning.
This Guide provides measurements and reporting of the changes of aggressiveness and surface topography during the pad conditioning.
This Guide provides for optimal sequence of the conditioning tests for multiple disks of different design.
This Guide provides test conditions during pad and disk break-in.
This Guide provides a reference to multiplicity of the analytical tools and approaches to measure pad aggressiveness and pad surface topography.
Reference to this Guide can be used in the quality documents from a disk supplier to an original device manufacturer (ODM)/integrated device manufacturer (IDM) customer, for example, in the technical data package or corresponding certificate of acceptance (CoA).
Reference to this Guide can be used for generating roadmaps for the development of new semiconductor technologies and materials.
Referenced SEMI Standards (purchase separately)
SEMI C103-1021 (first published)
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