SEMI E180 - Test Method for Measuring Surface Metal Contamination Through ICP-MS of Critical Chamber Components Used in Semiconductor Wafer Processing
This Document describes a method for a quantitative analysis for surface trace-metal concentration of critical chamber components (CCCs) by using inductively coupled plasma-mass spectrometry (ICP-MS). This Standard is intended to promote communication between the users and the processing-equipment suppliers. It can be also used to facilitate better communication regarding surface metal-contamination expectation and its test method between the processing equipment suppliers and the CCC manufacturers.
This Document describes the procedure for trace-metal measurement, including the surface trace-metal collection from a CCC, as it influences the reliability of measurement data and reproducibility of each test facility.
The use of this Document is to ensure consistency in the reporting of results provided by each processing-equipment supplier or CCC manufacturer.
This Document applies to the measurement of surface trace-metal concentration of CCCs (e.g., showerheads, pedestals) by ICP-MS.
This Document applies to an unused CCC or its parts.
This Document covers local extraction and full-immersion trace-metal collection techniques.
The objective metals in this measurement are aluminum (Al), sodium (Na), potassium (K), calcium (Ca), lithium (Li), iron (Fe), copper (Cu), nickel (Ni), chromium (Cr), cobalt (Co), titanium (Ti), magnesium (Mg), and zinc (Zn).
Referenced SEMI Standards
SEMI C10 — Guide for Determination of Method Detection Limits
SEMI C16 — Guide for Precision and Data Reporting Practices
SEMI F63 — Guide for Ultrapure Water Used in Semiconductor Processing