SEMI G96 - Test Method for Measurement of Chip (Die) Strength by Mean of Cantilever Bending -

Abstract

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1  Purpose
1.1  This Test Method defines a procedure for evaluation of die strength by mean of cantilever bending where 3 point bending is not easy to measure strength in case of wafer thickness less than 50 µm.
2  Scope
2.1  This Test Method applies only for cantilever bending method, and other methods will be defined by separate documents.
2.2  This Test Method is used to measure die strength for dies from processed wafers.
2.3  Wafer thinning technology becomes popular to meet the demand for thin packages, so the die strength data is critical for the die quality and certification. This Standard extends to the region of ultra-thin thickness from 3 point bending measurement method SEMI G86-0303 which describes the Die Strength Evaluation Method, Measurement Data Summary Technique and Data Usage for Test Report.
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Referenced SEMI Standards (purchase separately)
SEMI G86 — Test Method for Measurement of Chip (Die) Strength by Mean of 3 Point Bending
NOTICE: Unless otherwise indicated, all documents cited shall be the latest published versions.

Revision History
SEMI G96-0126 (technical revision)
SEMI G96-1014 (Reapproved 1019)
SEMI G96-1014 (first published)

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