SEMI HB8 - Test Method for Determining Orientation of a Sapphire Single Crystal
This Standard was technically approved by the HB-LED Global Technical Committee. This edition was approved for publication by the global Audits and Reviews Subcommittee on December 8, 2016. Available at www.semiviews.org and www.semi.org in February 2017.
The purpose of this Standard is to standardize a test method for sapphire single crystal orientation measurement which includes sapphire cylinder, sapphire ingot, sapphire wafer, etc. It will improve the standardization of sapphire single crystal process from coring sapphire ingot, rolling cylindrical ingot to cutting wafer and provide solution to improve sapphire products as well. Similar processes are defined in ASTM E82.
The test method of this Specification is X-ray diffraction orientation.<br>This Test Method is applied to determine the crystallographic orientation of a surface which is substantially parallel to the low index planes for sapphire single crystal materials.
Referenced SEMI Standards
SEMI M59 — Terminology for Silicon Technology
SEMI MF847 — Standard Test Method for Measuring Crystallographic Orientation of Flats on Single Crystal Silicon Wafers by X-Ray Techniques