HB00900 - SEMI HB9 - Test Method and Acceptance Criteria for Visual Inspection of Surface Defects of GaN Epitaxial Wafers Used for Manufacturing HB-LED

This Standard was technically approved by the HB-LED Global Technical Committee. This edition was approved for publication by the global Audits and Reviews Subcommittee on May 22, 2018. Available at www.semiviews.org and www.semi.org in August 2018.

The purpose of this Document is to provide test methods to visually detect surface defects of GaN epitaxial wafer for manufacturing high brightness LEDs, and to define acceptance criteria for the types, number, size and distribution area.

This Test Method defines the equipment and measurement procedure for visually detecting the surface defects of GaN epitaxial wafer for manufacturing high brightness LEDs. The test method applies to homoepitaxial wafers on GaN bulk substrates as well as to heteroepitaxial wafers on substrates such as sapphire, silicon SiC and other materials used for manufacturing HB-LED.

This Test Method defines the surface defect characterization requirements and the acceptance criteria for GaN based LED epitaxial wafers.

SEMI M59 — Terminology for Silicon Technology

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