HB01000 - SEMI HB10 - Specification for Single Crystal Sapphire Intended for Use for Manufacturing HB-LED Wafers
This Standard was technically approved by the HB-LED Global Technical Committee. This edition was approved for publication by the global Audits and Reviews Subcommittee on July 6, 2018. Available at www.semiviews.org and www.semi.org in October 2018.
Sapphire has become the most popular substrate material in the HB-LED industry. This Document identifies and defines the key parameters of sapphire intended for use in manufacturing HB-LED wafers. The properties of sapphire are decided by physical and chemical parameters and crystal defects. These key parameters of the sapphire are intended to provide the necessary information to specify the sapphire material for manufacturing HB-LED wafers.
This Standard includes the physical and chemical parameters of sapphire, and the crystal defects.
The physical and chemical parameters include hardness, transmission, and the purity.
The crystal defects include etch pit density (EPD), bubbles, cloud, grain boundary, inclusion, color, and crack.
This Standard does not define the physical shape or geometry of a sapphire. It only defines the necessary parameters of the single crystal sapphire material used for HB-LED wafers.
Referenced SEMI Standards
SEMI M36 — Test Method for Measuring Etch Pit Density in Low Dislocation Density Gallium Arsenide Wafers
SEMI M40 — Guide for Measurement of roughness of Planar Surfaces on Polished Wafers
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