SEMI HB11 - Specification for Sapphire Single Crystal Ingot Intended for Use for Manufacturing HB-LED Wafers -

Abstract

The sapphire single crystal ingot is used as a substrate material for HB-LED applications. To permit common processing equipment to be used in multiple device fabrication lines, it is essential for the sapphire single crystal ingot specifications to be standardized.

This Specification provides the characteristics of sapphire single crystal ingot, consisting of the physical specification, orientation, shape, and defect standard.

This Specification is the requirement for key parameters and the defects of sapphire single crystal ingots only used for manufacturing wafers for HB-LED applications.

The key parameters cover the ingot diameter, reference plane width, end face orientation, reference plane orientation, verticality, and roundness.

The defects which need to be deducted along the axial direction of the sapphire single crystal ingot, consist of bubbles and cloud, surface scratch, crack, and chip.

Referenced SEMI Standards (purchase separately)

SEMI HB8 — Test Method for Determining Orientation of a Sapphire Single Crystal

SEMI HB10 — Specification for Single Crystal Sapphire Intended for Use for Manufacturing HB-LED Wafers

SEMI M40 — Guide for Measurement of Roughness of Planar Surfaces on Polished Wafers

Revision History

SEMI HB11-0121 (technical revision)

SEMI HB11-0819 (first published)

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