SEMI M4 - Specifications for SOS Epitaxial Wafers -

Abstract

This standard was technically approved by the global Silicon Wafer Committee. This edition was approved for publication by the global Audits & Reviews Subcommittee on November 21, 2006. It was available at www.semi.org in February 2007. Originally published in 1978; previously published November 2003.

 

NOTICE: This document was balloted and approved for withdrawal in 2007.

 

These specifications cover requirements for monocrystalline silicon epitaxial layers on sapphire substrates, used for semiconductor device manufacture. The combination of a silicon epitaxial layer on a sapphire substrate is known as a silicon on sapphire (SOS) epitaxial wafer. By outlining an inspection process and defining various reject criteria, both suppliers and purchasers can uniformly define epitaxial layer quality.

　

Referenced SEMI Standards

SEMI M3 — Specifications for Polished Monocrystalline Sapphire Substrates
SEMI MF81 — Test Method for Measuring Radial Resistivity Variation on Silicon Wafers

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