SEMI M6 - Specification for Silicon Wafers for Use as Photovoltaic Solar Cells
This Standard was technically approved by the global Silicon Wafer Technical Committee. This edition was approved for publication by the global Audits and Reviews Subcommittee on June 18, 2012. Available at www.semiviews.org and www.semi.org in July 2012; originally published in 1981; previously published November 2008.
NOTICE: This Document was balloted and approved for withdrawal in 2012.
NOTICE: This Document replaces the previous version of SEMI M6 along with SEMI M6.1, SEMI M6.2, SEMI M6.3, SEMI M6.4 and SEMI M6.5 in their entirety.
This Specification covers the requirements for silicon wafers for use in photovoltaic (PV) solar cell manufacture.
Referenced SEMI Standards
SEMI M1 — Specifications for Polished Monocrystalline Silicon Wafers
SEMI M59 — Terminology for Silicon Technology
SEMI MF26 — Test Methods for Determining the Orientation of a Semiconductive Single Crystal
SEMI MF28 — Test Methods for Minority-Carrier Lifetime in Bulk Germanium and Silicon by Measurement of Photoconductivity Decay
SEMI MF42 — Test Methods for Conductivity Type of Extrinsic Semiconducting Materials
SEMI MF43 — Test Methods for Resistivity of Semiconductor Materials
SEMI MF84 — Test Method for Measuring Resistivity of Silicon Wafers with an In-Line Four-Point Probe
SEMI MF391 — Test Methods for Minority Carrier Diffusion Length in Extrinsic Semiconductors by Measurement of Steady-State Surface Photovoltage
SEMI MF398 — Test Method for Majority Carrier Concentration in Semiconductors by Measurement of Wavenumber or Wavelength of the Plasma Resonance Minimum
SEMI MF533 — Test method for Thickness and Thickness Variation of Silicon Wafers
SEMI MF657 — Test Method for Measuring Warp and Total Thickness Variation on Silicon Wafers by Noncontact Scanning
SEMI MF673 — Test Methods for Measuring Resistivity of Semiconductor Wafers or Sheet Resistance of Semiconductor Films with a Noncontact Eddy-Current Gage
SEMI MF1188 — Test Method for Interstitial Oxygen Content of Silicon by Infrared Absorption With Short Baseline
SEMI MF1391 — Test Method for Substitutional Atomic Carbon Content of Silicon by Infrared Absorption
SEMI MF1535 — Test Method for Carrier Recombination Lifetime in Silicon Wafers by Noncontact Measurement of Photoconductivity Decay by Microwave Reflectance
SEMI MF1619 — Test Method for Measurement of Interstitial Oxygen Content of Silicon Wafers by Infrared Absorption Spectroscopy with p-Polarized Radiation Incident at the Brewster Angle
SEMI MF2074 — Guide for Measuring Diameter of Silicon and Other Semiconductor Wafers
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