SEMI M9 - Specification for Polished Monocrystalline Gallium Arsenide Wafers

Volume(s): Materials
Language: English
Type: Single Standards Download (.pdf)
Abstract

This Standard was technically approved by the Compound Semiconductor Materials Global Technical Committee. This edition was approved for publication by the global Audits and Reviews Subcommittee on July 21, 2016. Available at www.semiviews.org and www.semi.org in August 2016; originally published in 1986; previously published September 2014.

 

This Specification covers two groups of substrate requirements for monocrystalline high-purity gallium arsenide wafers used in semiconductor and electronic device manufacture. Dimensional and crystallographic orientation characteristics and limits on surface defects are the only standardized properties set forth below.

 

A complete purchase specification may require that additional physical, electrical, and bulk properties be defined. These properties are listed, together with test methods suitable for determining their magnitude where such procedures are documented.

 

This Specification is directed specifically to gallium arsenide wafers with one or both sides polished. Unpolished wafers or wafers with epitaxial films are not covered; however, purchasers of such wafers may find this Specification helpful in defining their requirements.

 

The material is single crystal gallium arsenide (GaAs) having a cubic zinc blende structure and having the following properties. The following properties are for use as guidelines:

Density

5.316 gm/cm3

Melting Point

1238° C

Dielectric Constant

13.1

Lattice Parameter

5.654 Å

Energy Gap

1.42 eV

 

For reference purposes, SI (System International, commonly called metric) units shall be used.

 

Subordinate Standards:

SEMI M9.1-0813 — Specification for Round 50.8 mm Polished Monocrystalline Gallium Arsenide Wafers for Electronic Device Applications

SEMI M9.2-0813 — Specification for Round 76.2 mm Polished Monocrystalline Gallium Arsenide Wafers for Electronic Device Applications

SEMI M9.3-0812 — Specification for Round 2 inch Diameter Polished Monocrystalline Gallium Arsenide Slices for Optoelectric Applications

SEMI M9.4-0812 — Specification for Round 3 inch Diameter Polished Monocrystalline Gallium Arsenide Slices for Optoelectric Applications

SEMI M9.5-0813 — Specification for Round 100 mm Polished Monocrystalline Gallium Arsenide Wafers for Electronic Device Applications

SEMI M9.6-0813 — Specification for Round 125 mm Diameter Polished Monocrystalline Gallium Arsenide Wafers

SEMI M9.7-0914 — Specification for Round 150 mm Diameter Polished Monocrystalline Gallium Arsenide Wafers (Notched)

SEMI M9.8-0306 (Reapproved 0812) — Specification for Round 200 mm Polished Monocrystalline Gallium Arsenide Wafers (Notched)

 

 

Referenced SEMI Standards

SEMI MF26 — Test Method for Determining the Orientation of a Semiconductive Single Crystal
SEMI MF154 — Guide for Identification of Structures and Contaminants Seen on Specular Silicon Surfaces
SEMI MF523 — Practice for Unaided Visual Inspection of Polished Silicon Wafer Surfaces
SEMI MF533 — Test Method for Thickness and Thickness Variation of Silicon Wafers
SEMI MF671 — Test Method for Measuring Flat Length on Wafers of Silicon and Other Electronic Materials
SEMI MF928 — Test Method for Edge Contour of Circular Semiconductor Wafers and Rigid Disk Substrates
SEMI MF1390 — Test Method for Measuring Bow and Warp on Silicon Wafers by Automated Noncontact Scanning
SEMI MF1530 — Test Method for Measuring Flatness, Thickness, and Total Thickness Variation on Silicon Wafers by Automated Noncontact Scanning
SEMI MF2074 — Guide for Measuring Diameter of Silicon and Other Semiconductor Wafers

Member Price: $113.00
Regular price Non-Member Price: $150.00