SEMI M10 - Terminology for Identification of Structures and Features Seen on Gallium Arsenide Wafers

Volume(s): Materials
Language: English
Type: Single Standards Download (.pdf)
Abstract

This Standard was technically approved by the Compound Semiconductor Materials Global Technical Committee. This edition was approved for publication by the global Audits and Reviews Subcommittee on June 28, 2017. Available at www.semiviews.org and www.semi.org in February 2018; originally published in 1996; previously published August 2016.

 

The purpose of this Document is to list, illustrate, and define various characters, features, and contaminants that are seen on highly polished GaAs wafers and present recommended practices for observation of these defects. These occurrences are frequently referred to as surface defects. The defects and common synonyms are arranged alphabetically in § 4, and each structure is referred to by its most common name and, in some cases, probably origins.

 

Two cases of surface preparations are considered in this Document: (1) surfaces after chemical polishing, and (2) mechanically and chemically polished surfaces.

 

This Standard may involve hazardous materials, operations, and equipment.

 

Referenced SEMI Standards

None.

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