SEMI M14 - Specification for Ion Implantation and Activation Process for Semi-Insulating Gallium Arsenide Single Crystals
The purpose of this document is to present a process for ion implantation, activation, and measurement of the resulting layers so that meaningful comparisons can be made between various lots of semi-insulating GaAs. This test will be performed by the supplier so that product may be represented in a standard way.
Referenced SEMI Standards
|Interested in purchasing additional SEMI Standards? Consider SEMIViews, an online portal with access to over 1000 Standards.|