SEMI M14 - Specification for Ion Implantation and Activation Process for Semi-Insulating Gallium Arsenide Single Crystals -
Abstract
The purpose of this document is to present a process for ion implantation, activation, and measurement of the resulting layers so that meaningful comparisons can be made between various lots of semi-insulating GaAs. This test will be performed by the supplier so that product may be represented in a standard way.
Referenced SEMI Standards
None.
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M01400 - SEMI M14 - Specification for Ion Implantation and Activation Process for Semi-Insulating Gallium Arsenide Single Crystals
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