SEMI M23 - Specification for Polished Monocrystalline Indium Phosphide Wafers

Volume(s): Materials
Language: English
Type: Single Standards Download (.pdf)
Abstract

This Standard was technically approved by the Compound Semiconductor Materials Global Technical Committee. This edition was approved for publication by the global Audits and Reviews Subcommittee on June 28, 2017. Available at www.semiviews.org and www.semi.org in February 2018; originally published in 1993; previously published August 2011.

 

NOTICE: This Document was reapproved with minor editorial changes.

 

These specifications cover the substrate requirements for monocrystalline high-purity indium phosphide wafers used in semiconductor and electronic device manufacturing. Dimensional and crystallographic orientation characteristics are the only standardized properties set forth below.

 

A complete purchase specification may require that additional physical, electrical, and bulk properties be defined. These properties are listed together with test methods suitable for determining their magnitude where such procedures are documented.

 

These specifications are directed specifically to indium phosphide wafers with one or both sides polished. Unpolished wafers or wafers with epitaxial films are not covered; however, purchasers of such wafers may find these specifications helpful in defining their requirements.

 

The material is single crystal indium phosphide (InP) having a cubic zinc blend structure and the following properties:

Density

4.787 g/cm3

Melting Point

1062°C

Dielectric Constant

12.4

Lattice Parameter

5.869 A at 27°C

Energy Gap

1.351 eV at 27°C

 

For reference purposes SI (System International, commonly called metric) units shall be used.

 

Subordinate Standards:

SEMI M23.1-0211 (Reapproved 0218) — Specification for Round 50 mm Diameter Polished Monocrystalline Indium Phosphide Wafers

SEMI M23.2-0211 (Reapproved 0218) — Specification for Round 3 inch (76.2 mm) Diameter Polished Monocrystalline Indium Phosphide Wafers

SEMI M23.3-0600 (Withdrawn 0811) — Specification for Rectangular Polished Monocrystalline Indium Phosphide Wafers

SEMI M23.4-0211 (Reapproved 0218) — Specification for Round 100 mm Polished Monocrystalline Indium Phosphide Wafers for Electronic and Optoelectronic Device Applications (Dove-Tail Type)

SEMI M23.5-0211 (Reapproved 0218) — Specification for Round 100 mm Polished Monocrystalline Indium Phosphide Wafers for Electronic and Optoelectronic Device Applications (V-Groove Option)

SEMI M23.6-0703 (Reapproved 0218) — Specification for Round 150 mm Polished Monocrystalline Indium Phosphide Wafers (Notched)

 

Referenced SEMI Standards

SEMI M39 — Test Method for Measuring Resistivity and Hall Coefficient and Determining Hall Mobility on Semi-Insulating GaAs Single Crystals
SEMI M59 — Terminology of Silicon Technology
SEMI MF26 — Test Method for Determining the Orientation of a Semiconductive Single Crystal
SEMI MF42 — Test Method for Conductivity Type of Extrinsic Semiconducting Materials
SEMI MF84 — Test Method for Measuring Resistivity of Silicon Wafers with an In-Line Four-Point Probe
SEMI MF154 — Guide for Identification of Structures and Contaminants Seen on Specular Silicon Surfaces
SEMI MF523 — Practice for Unaided Visual Inspection of Polished Silicon Wafer Surfaces
SEMI MF533 — Test Method for Thickness and Thickness Variation of Silicon Wafers
SEMI MF534 — Test Method for Bow of Silicon Wafers (Withdrawn 0115)
SEMI MF657 — Test Method for Measuring Warp and Total Thickness Variation on Silicon Wafers by Noncontact Scanning (Withdrawn 0914)
SEMI MF671 — Test Method for Measuring Flat Length on Wafers of Silicon and Other Electronic Materials
SEMI MF673 — Test Method for Measuring Resistivity of Semiconductor Wafers or Sheet Resistance of Semiconductor Films with a Noncontact Eddy-Current Gauge
SEMI MF928 — Test Method for Edge Contour of Circular Semiconductor Wafers and Rigid Disk Substrates
SEMI MF1392 — Test Method for Determining Net Carrier Density Profiles in Silicon Wafers by Capacitance-Voltage Measurements with a Mercury Probe
SEMI MF1393 — Test Method for Determining Net Carrier Density in Silicon Wafers by Miller Feedback Profiler Measurements with a Mercury Probe (Withdrawn 1105)
SEMI MF2074 — Guide for Measuring Diameter of Silicon and Other Semiconductor Wafers
SEMI T5 — Specification for Alphanumeric Marking of Round Compound Semiconductor Wafers

Member Price: $113.00
Regular price Non-Member Price: $150.00