M03000 - SEMI M30 - Standard Test Method for Substitutional Atomic Carbon Concentration in GaAs by Fourier Transform Infrared Absorption Spectroscopy
This standard was technically approved by the global Compound Semiconductor Committee. This edition was approved for publication by the global Audits & Reviews Subcommittee on November 19, 2008. It was available at www.semi.org in February 2009. Originally published in 1997.
NOTICE: This document was balloted and approved for withdrawal in 2009.
The purpose of this document is to test substitutional atomic carbon concentration in GaAs by Fourier Transform Infrared Absorption Spectroscopy (FT-IR). This referee test method covers the determination of substitutional carbon concentration in single crystal GaAs. The test method utilizes the relationship between carbon concentration and absorption coefficient at 580 cm-1 for room temperature measurement (around 582 cm-1 for 77K measurement), the infrared absorption band is associated with substitutional carbon in GaAs. These specific absorption bands in GaAs have been associated with the local vibration mode of Cas. The method is applicable to Semi-Insulating (SI) GaAs. Slices can be any crystallographic orientation and should be polished or lapped and etched on both surfaces. This test method is intended to be used with FT-IR spectrometers that are equipped to operate in the region including the wave number range from 700 to 500 cm-1. This standard may involve hazardous materials, operation, and equipment.
Referenced SEMI Standards
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