SEMI M33 - Test Method for the Determination of Residual Surface Contamination on Silicon Wafers by Means of Total Reflection X-Ray Fluorescence Spectroscopy (TXRF) -

Abstract

This standard was technically approved by the global Silicon Wafer Committee. This edition was approved for publication by the global Audits and Reviews Subcommittee on September 5, 2007. It was available at www.semi.org in October 2007. Originally published September 1998.

 

NOTICE: This document was balloted and approved for withdrawal in 2007.

 

The test provides the analytical procedure to determine the trace level of contaminating elements of an atomic number higher than 15 on polished or epitaxial silicon wafer surfaces in native or thermally grown or tetraethylorthosilicate (TEOS) oxide or in residues of microdroplets of process chemicals or media as analyzed with TXRF on silicon wafer surfaces as described in ¶ 15.1 and ¶ 15.2. This document specifies a VPD-TXRF (Vapor Phase Decomposition Total Reflection X-Ray Fluorescence Spectroscopy) method to analyze the elemental composition and areal density of impurities, that include cations and anions with atomic numbers between 16 (S) and 92 (U) independent of their chemical state, with the exception of the X-ray source material, on polished or epitaxial silicon wafer surfaces in native or thermally grown oxide or in residues of microdroplets of process chemicals or media as analyzed with TXRF on silicon wafer surfaces. This test is especially useful for analyzing metallic elements such as K, Ca, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, (Mo), Pd, Ag, Sn, Sb, Ta, (W), Pt, (Au), Hg, and Pb and non-metallic elements such as S, Cl, As, Br, and I through their characteristic K and L lines. (Elements in brackets are usual X-ray sources.) For limitations in the nature of analytes refer to the note in ¶ 14.7. This test method can be used to analyze areal surface contamination that can be collected in a microdroplet during the specified VPD preparation and the collection of the digested surface contamination in the range of 5 × 108 through 5 × 1012 atoms/cm2.

　

Referenced SEMI Standards

SEMI C7.3 — Standard for Hydrofluoric Acid, Grade 2
SEMI C7.5 — Standard for Hydrogen Peroxide, Grade 2
SEMI C7.6 — Standard for Nitric Acid, Grade 2
SEMI C10.1 — Guide for Determination of Method Detection Limits for Trace Metal Analysis by Plasma Spectroscopy
SEMI E45 — Test Method for the Determination of Inorganic Contamination from Minienvironments
SEMI M1 — Specifications for Polished Monocrystalline Silicon Wafers
SEMI M20 — Specification for Establishing a Wafer Coordinate System

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