M03700 - SEMI M37 - Test Method for Measuring Etch Pit Density (EPD) in Low Dislocation Density Indium Phosphide Wafers

SEMI M37 - Test Method for Measuring Etch Pit Density (EPD) in Low Dislocation Density Indium Phosphide Wafers -

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Volume(s): Materials
Language: English
Type: Single Standards Download (.pdf)
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Revision: SEMI M37-0699 - Inactive

Revision

Abstract

This test method was technically approved by the global Compound Semiconductor Committee and is the direct responsibility of the Japanese Compound Semiconductor Materials Committee. Current edition approved by the Japanese Regional Standards Committee on March 17, 1999. Initially available at www.semi.org April 1999; to be published June 1999.

 

This document provides a method to measure etch pit density (EPD) in low dislocation density InP wafers.

　

Referenced SEMI Standards

None.

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