SEMI M41 - Specification of Silicon-on-Insulator (SOI) for Power Device/ICs -

Abstract

NOTICE: This Document was completely rewritten in 2022.

This Specification covers requirements for silicon on insulator (SOI) for semiconductor power-device/IC manufacture. By defining inspection procedures and acceptance criteria, both users and suppliers may define product characteristics and quality requirements.

This Specification provides requirements of SOI wafers, which are used for power devices/ICs of specific voltage applications. The specification described here covers physical, electrical, and surface parameters of each layer along with each voltage range for wafers ≤200 mm and separately, the range for 300 mm wafers

Referenced SEMI Standards (purchase separately)

SEMI 3D17 — Specification for Reference Material for Bonded Wafer Stack Void Metrology

SEMI M1 — Specification for Polished Single Crystal Silicon Wafers

SEMI M12 — Specification for Serial Alphanumeric Marking of Silicon Wafers

SEMI M13 — Specification for Alphanumeric Marking of Silicon Wafers with Crystal Properties

SEMI M52 — Guide for Specifying Scanning Surface Inspection Systems for Silicon Wafers for the 130 nm to 5 nm Technology Generations

SEMI M53 — Practice for Calibrating Scanning Surface Inspection Systems Using Certified Depositions of Polystyrene Latex Spheres on Unpatterned Semiconductor Wafer Surfaces

SEMI M71 — Specification for Silicon-on-Insulator (SOI) Wafers for CMOS LSI

SEMI MF26 — Test Methods for Determining the Orientation of a Semiconductive Single Crystal

SEMI MF42 — Test Methods for Conductivity Type of Extrinsic Semiconducting Materials

SEMI MF43 — Test Methods for Resistivity of Semiconductor Materials

SEMI MF84 — Test Method for Measuring Resistivity of Silicon Wafers with an In-Line Four-Point Probe

SEMI MF95 — Test Method for Thickness of Lightly Doped Silicon Epitaxial Layers on Heavily Doped Silicon Substrates Using an Infrared Dispersive Spectrophotometer

SEMI MF110 — Test Method for Thickness of Epitaxial or Diffused Layers in Silicon by the Angle Lapping and Staining Technique

SEMI MF154 — Guide for Identification of Structures and Contaminants Seen on Specular Silicon Surfaces

SEMI MF523 — Practice for Unaided Visual Inspection of Polished Silicon Wafer Surfaces

SEMI MF533 — Test Method for Thickness and Thickness Variation of Silicon Wafers

SEMI MF576 — Test Method for Measurement of Insulator Thickness and Refractive Index on Silicon Substrates by Ellipsometry

SEMI MF671 — Test Method for Measuring Flat Length on Wafers of Silicon and Other Electronic Materials

SEMI MF847 — Test Method for Measuring Crystallographic Orientation of Flats on Single Crystal Silicon Wafers by X-Ray Techniques

SEMI MF928 — Test Method for Edge Contour of Circular Semiconductor Wafers and Rigid Disk Substrates

SEMI MF1152 —Test Method for Dimensions of Notches on Silicon Wafers

SEMI MF1153 — Test Method for Characterization of Metal-Oxide Silicon (MOS) Structures by Capacitance-Voltage Measurements

SEMI MF1188 — Test Method for Interstitial Atomic Oxygen Content of Silicon by Infrared Absorption with Short Baseline

SEMI MF1390 — Test Method for Measuring Warp on Silicon Wafers by Automated Noncontact Scanning

SEMI MF1391 — Test Method for Substitutional Atomic Carbon Content of Silicon by Infrared Absorption

SEMI MF1527 — Guide for Application of Silicon Standard Reference Materials and Reference Wafers for Calibration and Control of Instruments for Measuring Resistivity of Silicon

SEMI MF1530 — Test Method for Measuring Flatness, Thickness, and Thickness Variation on Silicon Wafers by Automated Noncontact Scanning

SEMI MF1535 — Test Method for Carrier Recombination Lifetime in Silicon Wafers by Noncontact Measurement of Photoconductivity Decay by Microwave Reflectance

SEMI MF1617 — Test Method for Measuring Surface Sodium, Aluminum, Potassium, and Iron on Silicon and EPI Substrates by Secondary Ion Mass Spectroscopy

SEMI MF1619 — Test Method for Measurement of Interstitial Oxygen Content of Silicon Wafers by Infrared Absorption Spectroscopy with p-Polarized Radiation Incident at Brewster Angle

SEMI MF1630 — Test Method for Low Temperature FT-IR Analysis of Single Crystal Silicon for III-V Impurities

SEMI MF1726 — Practice for Analysis of Crystallographic Perfection of Silicon Wafers

SEMI MF1727 — Practice for Detection of Oxidation Induced Defects in Polished Silicon Wafers

SEMI MF1809 — Guide for Selection and Use of Etching Solutions to Delineate Structural Defects in Silicon

SEMI MF2074 — Guide for Measuring Diameter of Silicon and Other Semiconductor Wafers

Revision History

SEMI M41-0723 (complete rewrite)

SEMI M41-0615 (technical revision)

SEMI M41-1213 (technical revision)

SEMI M41-0707 (technical revision)

SEMI M41-1101 (technical revision)

SEMI M41-0701 (technical revision)

SEMI M41-0600 (first published)

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