SEMI M42 - Specification for Compound Semiconductor Epitaxial Wafers
This Standard was technically approved by the Compound Semiconductor Materials Global Technical Committee. This edition was approved for publication by the global Audits and Reviews Subcommittee on July 21, 2016. Available at www.semiviews.org and www.semi.org in August 2016; originally published October 2000; previously published November 2011.
Compound semiconductor epitaxial layers have been extensively used for many years as the basis of high speed electronics and optoelectronic devices. There are suppliers of epitaxial layers who will grow material to the customer’s specification. There is a need to define standardized descriptive terms, tolerance schedules and recommended test methods to reduce ambiguity in the interpretation of specifications for such wafers. Special emphasis is placed on the definitions pertaining to uniformity. This Document addresses only the basic requirements. Further clarification may be required between supplier and purchaser for the particular layers required.
This Specification covers the requirements for epitaxial layers of the generic composition AaBbCc...Nn grown on monocrystalline wafers of GaAs or InP (other substrates may be considered where appropriate documents exist to describe the specification of the substrate). This Document may only cover a portion of the properties considered to be part of the purchase specification.
Referenced SEMI Standards
SEMI M1 — Specification for Polished Single Crystal Silicon Wafers
SEMI MF673 — Test Method for Measuring Resistivity of Semiconductor Wafers or Sheet Resistance of Semiconductor Films with a Noncontact Eddy Current Gauge
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