SEMI M46 - Test Method for Measuring Carrier Concentrations in Epitaxial Layer Structures by ECV Profiling
This Standard was technically approved by the Compound Semiconductor Materials Global Technical Committee. This edition was approved for publication by the global Audits and Reviews Subcommittee on July 6, 2015. Available at www.semiviews.org and www.semi.org in September 2015; originally published in 2001 previously published March 2009.
NOTICE: This Document was reapproved with minor editorial changes.
The purpose of this Document is to specify a method to measure the carrier concentration and carrier concentration vs. depth profile of epitaxial layers by electrochemical capacitance voltage (ECV) profiling.
This Test Method covers a procedure for measuring the carrier concentration of epitaxial layers by ECV profiling. This method focuses on improving the accuracy and repeatability of the measurement by standardizing the test conditions and reporting and by routine calibration of the measurement.
This Test Method is intended to cover the majority of routine samples measured. However, because of the number of different materials encountered it cannot cover every contingency.
Referenced SEMI Standards
SEMI C1 — Guide for the Analysis of Liquid Chemicals
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