SEMI M47 - Specification for Silicon-on-Insulator (SOI) Wafers for CMOS LSI Applications

Volume(s): Materials
Language: English
Type: Single Standards Download (.pdf)
Abstract

This standard was technically approved by the global Silicon Wafer Committee. This edition was approved for publication by the global Audits & Reviews Subcommittee on April 25, 2007. Initially available at www.semi.org in October 2010. Originally published November 2001; previously published July 2007.

 

NOTICE: This document was balloted and approved for withdrawal in 2010.

 

This specification defines thin-layer silicon-on-insulator (SOI) wafer requirements for CMOS large scale integrated circuit (LSI) devices. In another aspect, this specification defines the generic characteristics of SIMOX and bonded SOI wafers having typically no more than 0.2 μm SOI layer thickness. By defining parameters, inspection procedures and acceptance criteria, both suppliers and customers may uniformly define product characteristics and quality requirements.

 

Referenced SEMI Standards

SEMI M1 — Specifications for Polished Single Crystal Silicon Wafers
SEMI M18 — Guide for Developing Specification Forms for Order Entry of Silicon Wafers
SEMI M35 — Guide for Developing Specifications for Silicon Wafer Surface Features Detected by Automated Inspection
SEMI M41 — Specification of Silicon-on-Insulator (SOI) for Power Device/ICs
SEMI M53 — Practice for Calibrating Scanning Surface Inspection Systems Using Certified Depositions of Polystyrene Latex Spheres on Unpatterned Semiconductor Wafer Surfaces
SEMI M59 — Terminology for Silicon Technology
SEMI MF26 — Test Methods for Determining the Orientation of a Semiconductive Single Crystal
SEMI MF42 — Test Methods for Conductivity Type of Extrinsic Semiconductor Materials
SEMI MF84 — Test Method for Measuring Resistivity of Silicon Wafers with an In-Line Four-Point Probe
SEMI MF523 — Practice for Unaided Visual Inspection of Polished Silicon Wafer Surfaces
SEMI MF533 — Test Method for Thickness and Thickness Variation of Silicon Wafers
SEMI MF671 — Test Method for Measuring Flat Length on Wafers of Silicon and Other Electronic Materials
SEMI MF928 — Test Methods for Edge Contour of Circular Semiconductor Wafers and Rigid Disk Substrates
SEMI MF1152 — Test Methods for Dimensions of Notches on Silicon Wafers
SEMI MF1188 — Test Method for Interstitial Oxygen Content of Silicon by Infrared Absorption with Short Baseline
SEMI MF1390 — Test Method for Measuring Warp on Silicon Wafers by Automated Noncontact Scanning
SEMI MF1530 — Test Method for Measuring Flatness, Thickness, and Thickness Variation on Silicon Wafers by Automated Noncontact Scanning
SEMI MF1619 — Test Method for Measurement of Interstitial Oxygen Content of Silicon Wafers by Infrared Absorption Spectroscopy with p-Polarized Radiation Incident at Brewster Angle
SEMI MF2074 — Guide for Measuring Diameter of Silicon and Other Semiconductor Wafers

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