SEMI M51 - Test Method for Characterizing Silicon Wafer by Gate Oxide Integrity

Volume(s): Materials
Language: English
Type: Single Standards Download (.pdf)
Abstract

This Standard was technically approved by the global Silicon Wafer Technical Committee. This edition was approved for publication by the global Audits and Reviews Subcommittee on August 30, 2012. Available at www.semiviews.org and www.semi.org in October 2012; originally published July 2002; previously published March 2003.

 

NOTICE: This Document was completely rewritten in 2012.

 

This Test Method describes procedures for characterizing silicon wafers to determine gate oxide integrity (GOI). GOI is originally developed to detect crystal originated particle/pit (COP) but it is now known as a test method sensitive to other surface qualities. Therefore, the GOI evaluation results are effective information for both the wafer manufacturers and device manufacturers.

 

The time zero dielectric breakdown (TZDB) method can provide an oxide film failure mode classification. SEMI M60 is GOI metrology based on time dependent dielectric breakdown (TDDB) method. The TDDB method evaluates the oxide integrity., Therefore, the TZDB method is an important GOI metrology in addition to TDDB.

 

This Test Method provides detailed procedures for characterizing silicon wafers GOI using the TZDB method. This Test Method describes standard procedures for metal oxide semiconductor (MOS) capacitor fabrication, electrical measurement, analysis, and reporting.

 

Thermally grown gate oxide film with gate oxide thicknesses of 20 to 25 nm and polysilicon electrode is used to make a MOS capacitor.

 

It is well known that oxygen precipitates are also a source of gate oxide defects. However, this is beyond the scope of this Standard because the as-received wafers rarely contain oxygen precipitates large enough to impact GOI.

 

Referenced SEMI Standards

SEMI C3.6 — Specification for Phosphine (PH3) in Cylinders 99.98% Quality
SEMI C3.55 — Specification for Silane (SiH4), Bulk, 99.994% Quality
SEMI C21 — Specifications and Guideline for Ammonium Hydroxide
SEMI C27 — Specifications and Guidelines for Hydrochloric Acid
SEMI C28 — Specifications for Hydrofluoric Acid
SEMI C30 — Specifications for Hydrogen Peroxide
SEMI C35 — Specifications and Guideline for Nitric Acid
SEMI C38 — Guide for Phosphorus Oxychloride
SEMI C41 — Specifications and Guidelines for 2-Propanol
SEMI C44 — Specifications and Guidelines for Sulfuric Acid
SEMI C54 — Specifications and Guidelines for Oxygen
SEMI C58 — Specifications and Guidelines for Hydrogen
SEMI C59 — Specifications and Guidelines for Nitrogen
SEMI F63 — Guide for Ultrapure Water Used in Semiconductor Processing
SEMI M1 — Specifications for Polished Single Crystal Silicon Wafers
SEMI M59 — Terminology for Silicon Technology
SEMI M60 — Test Method for Time Dependent Dielectric Breakdown Characteristics of SiO2 Films for Si Wafer Evaluation
SEMI MF1771 — Test Method for Evaluating Gate Oxide Integrity by Voltage Ramp Technique

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