M05400 - SEMI M54 - Guide for Semi-Insulating (SI) GaAs Material Parameters

Volume(s): Materials
Language: English
Type: Single Standards Download (.pdf)

Substrates with high electrical resistivity and electron drift mobility are needed to fabricate high performance digital and analog microelectronic devices and circuits. Semi-insulating n-type gallium arsenide, henceforth termed SI GaAs, has been established worldwide as a preferred substrate material for such applications.


The active layers needed for devices are generated either by ion implantation or by epitaxy. The quality of these layers, and hence the performance, yield and reliability of devices, strongly depends on the bulk and surface quality of the substrate.


This Document provides a basis for specifying the material parameters of SI GaAs to support ordering agreements between suppliers and purchasers.

This Document defines and describes the electrical, optical, structural, and surface properties of SI GaAs that are considered technically relevant according to the present status of scientific knowledge and material technology.

A specification of the material quality of SI GaAs substrates includes a number of the parameters described below. Depending on the intended application, a particular subset of properties and respective parameters will be considered relevant by the purchaser.


Referenced SEMI Standards

SEMI M9 — Specification for Polished Monocrystalline Gallium Arsenide Slices

SEMI M10 — Terminology for Identification of Structures and Features Seen on Gallium Arsenide

SEMI M15 — Polished Wafer Defect Limits Table for Polished Gallium Arsenide Wafers

SEMI M36 — Test Method for Measuring Etch Pit Density (EPD) in Low Dislocation Density Gallium Arsenide Wafers

SEMI M39 — Test Method for Measuring Resistivity and Hall Coefficient and Determining Hall Mobility in Semi-insulating GaAs Single Crystals

SEMI M64 — Test Method for the El2 Deep Donor Concentration in Semi-Insulating (SI) Gallium Arsenide Single Crystals by Infrared Absorption Spectroscopy

SEMI M82 — Test Method for the Carbon Acceptor Concentration in Semi-Insulating Gallium Arsenide Single Crystals by Infrared Absorption Spectroscopy

SEMI M83 — Test Method for Determination of Discoloration Etch Pit Density in Monocrystals of III-V Compound Semiconductors

SEMI M87 — Test Method for Contactless Resistivity Measurement of Semi-Insulting Semiconductors

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