SEMI M54 - Guide for Semi-Insulating (SI) GaAs Material Parameters -
Abstract
Substrates
with high electrical resistivity and electron drift mobility are needed to
fabricate high performance digital and analog microelectronic devices and
circuits. Semi-insulating n-type
gallium arsenide, henceforth termed SI GaAs, has been established worldwide as
a preferred substrate material for such applications.
The
active layers needed for devices are generated either by ion implantation or by
epitaxy. The quality of these layers, and hence the performance, yield and
reliability of devices, strongly depends on the bulk and surface quality of the
substrate.
This
Document provides a basis for specifying the material parameters of SI GaAs to
support ordering agreements between suppliers and purchasers.
This
Document defines and describes the electrical, optical, structural, and surface
properties of SI GaAs that are considered technically relevant according to the
present status of scientific knowledge and material technology.
A specification of the material quality of SI GaAs substrates includes a number of the parameters described below. Depending on the intended application, a particular subset of properties and respective parameters will be considered relevant by the purchaser.
Referenced SEMI Standards
SEMI M9 —
Specification for Polished Monocrystalline Gallium Arsenide Slices SEMI M10 —
Terminology for Identification of Structures and Features Seen on Gallium
Arsenide SEMI M15 —
Polished Wafer Defect Limits Table for Polished Gallium Arsenide Wafers SEMI M36 — Test
Method for Measuring Etch Pit Density (EPD) in Low Dislocation Density Gallium
Arsenide Wafers SEMI M39 — Test
Method for Measuring Resistivity and Hall Coefficient and Determining Hall
Mobility in Semi-insulating GaAs Single Crystals SEMI M64 — Test
Method for the El2 Deep Donor Concentration in Semi-Insulating (SI) Gallium
Arsenide Single Crystals by Infrared Absorption Spectroscopy SEMI M82 — Test
Method for the Carbon Acceptor Concentration in Semi-Insulating Gallium
Arsenide Single Crystals by Infrared Absorption Spectroscopy SEMI M83 — Test
Method for Determination of Discoloration Etch Pit Density in Monocrystals of
III-V Compound Semiconductors SEMI M87 — Test
Method for Contactless Resistivity Measurement of Semi-Insulting Semiconductors
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