SEMI M54 - Guide for Semi-Insulating (SI) GaAs Material Parameters
This Standard was technically approved by the global Compound Semiconductor Committee. This edition was approved for publication by the global Audits & Reviews Subcommittee on May 13, 2011. Available at www.semiviews.org and www.semi.org in June 2011; originally published March 2003; previously published March 2004.
Substrates with high electrical resistivity and electron drift mobility are needed to fabricate high performance digital and analog microelectronic devices and circuits. Semi-insulating n-type gallium arsenide, henceforth termed SI GaAs, has been established worldwide as a preferred substrate material for such applications.
The active layers needed for devices are generated either by ion implantation or by epitaxy. The quality of these layers, and hence the performance, yield and reliability of devices, strongly depends on the bulk and surface quality of the substrate.
This document provides a basis for specifying the material parameters of SI GaAs to support ordering agreements between suppliers and purchasers.
Referenced SEMI Standards
SEMI M9 — Specifications for Polished Monocrystalline Gallium Arsenide Slices
SEMI M10 — Standard Nomenclature for Identification of Structures and Features Seen on Gallium Arsenide
SEMI M15 — Polished Wafer Defect Limits Table for Polished Gallium Arsenide