SEMI M55 - Specification for Polished Monocrystalline Silicon Carbide Wafers -

Member Price: $138.00
Non-Member Price: $180.00

Volume(s): Materials
Language: English
Type: Single Standards Download (.pdf)
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Revision: SEMI M55-0921 - Current

Revision

Abstract


These specifications cover substrate requirements for monocrystalline high-purity silicon carbide wafers of crystallographic polytype 6H and 4H used in semiconductor and electronic device manufacturing.


A complete purchase specification may require the defining of additional physical, electrical, and bulk properties. These properties are listed, together with test methods suitable for determining their magnitude where such procedures are documented.

These specifications are directed specifically to silicon carbide wafers with one or both sides polished. Unpolished wafers or wafers with epitaxial films are not covered; however, purchasers of such wafers may find these specifications helpful in defining their requirements.

Referenced SEMI Standards (purchase separately)

SEMI M1 — Specification for Polished Single Crystal Silicon Wafers

SEMI M59 — Terminology for Silicon Technology

SEMI M81 — Guide to Defects Found on Monocrystalline Silicon Carbide Substrates

SEMI M83 — Test Method for Determination of Dislocation Etch Pit Density in Monocrystals of III-V Compound Semiconductors

SEMI M87 — Test Method for Contactless Resistivity Measurement of Semi-Insulating Semiconductors

SEMI MF26 — Test Method for Determining the Orientation of a Semiconductive Single Crystal

SEMI MF154 — Guide for Identification of Structures and Contaminants Seen on Specular Silicon Surfaces

SEMI MF523 — Practice for Unaided Visual Inspection of Polished Silicon Wafer Surfaces

SEMI MF671 — Test Method for Measuring Flat Length on Wafers of Silicon and Other Electronic Materials

SEMI MF673 — Test Method for Measuring Resistivity of Semiconductor Wafers or Sheet Resistance of Semiconductor Films with a Noncontact Eddy-Current Gauge

SEMI MF847 — Test Method for Measuring Crystallographic Orientation of Flats on Single Crystal Silicon Wafers by X-Ray Techniques

SEMI MF928 — Test Method for Edge Contour of Circular Semiconductor Wafers and Rigid Disk Substrates

SEMI MF1390 — Test Method for Measuring Bow and Warp on Silicon Wafers by Automated Noncontact Scanning

SEMI MF1530 — Test Method for Measuring Flatness, Thickness, and Total Thickness Variation on Silicon Wafer by Automated Noncontact Scanning

SEMI MF2074 — Guide for Measuring Diameter of Silicon and Other Semiconductor Wafers

SEMI T5 — Specification for Alphanumeric Marking of Round Compound Semiconductor Wafers

Revision History

SEMI M55-0921 (technical revision)

SEMI M55-0817 (complete rewrite to combine SEMI M55.1, SEMI M55.2, SEMI M55.3, and SEMI M55.4)

SEMI M55-0315 (designation update)

SEMI M55-0814 (technical revision)

SEMI M55-0308 (technical revision)

SEMI M55-0705 (designation update)

SEMI M55-0304 (designation update)

SEMI M55-0303 (first published)

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