M05700 - SEMI M57 - シリコンアニールウェーハの仕様

Volume(s): Materials
Language: Japanese
Type: Single Standards Download (.pdf)

本スタンダードは,global Silicon Wafer Committeeで技術的に承認されている。現版は201323日,global Audits and Reviews Subcommitteeにて発行が承認された。20134月にwww.semiviews.orgおよび www.semi.orgで入手可能となる。初版は20047月,前版は201110月発行。




本仕様は180 nm130 nm90 nm( R1-1), 65 nm, 45 nm, 32 nm, ( R1-2), 22 nm ( R1-3)世代のデバイスにおけるシリコンアニールウェーハの幾何学的,電気的,化学的および構造的特性を包括している。




アニールウェーハを使用する理由のひとつは,アニールウェーハ表層のcrystal originated particlesCOP)を減らすことができるということである。バルク欠陥がない領域(denuded zoneDZ)の深さもまた重要なパラメータである。


Referenced SEMI Standards

SEMI M1 — Specifications for Polished Single Crystal Silicon Wafers
SEMI M35 — Guide for Developing Specifications for Silicon Wafer Surface Features Detected by Automated Inspection
SEMI M45 — Specification for 300 mm Wafer Shipping System
SEMI M53 — Practice for Calibrating Scanning Surface Inspection Systems Using Depositions of Monodisperse Polystyrene Latex Sphere on Unpatterned Semiconductor Wafer Surfaces
SEMI M58 — Test Method for Evaluating DMA-Based Particle Deposition Systems and Processes
SEMI M59 — Terminology for Silicon Technology
SEMI MF81 — Test Method for Measuring Radial Resistivity Variation on Silicon Wafers
SEMI MF391 — Test Methods for Minority-Carrier Diffusion Length in Extrinsic Semiconductors by Measurement of Steady-State Surface Photovoltage
SEMI MF523 — Practice for Unaided Visual Inspection of Polished Silicon Wafer Surfaces
SEMI MF951 — Test Method for Determination if Radial Interstitial Oxygen Variation in Silicon Wafers
SEMI MF1239 — Test Methods for Oxygen Precipitation Characteristics of Silicon Wafers by Measurement of Interstitial Oxygen Reduction
SEMI MF1530 — Test Method for Measuring Flatness, Thickness, and Total Thickness Variation on Silicon Wafers by Automated Noncontact Scanning
SEMI MF1535 — Test Method for Carrier Recombination Lifetime in Silicon Wafers by Noncontact Measurement of Photoconductivity Decay by Microwave Reflectance
SEMI MF1617 — Test Method for Measuring Surface Sodium, Aluminum, Potassium, and Iron on Silicon and Epi Substrates by Secondary Ion Mass Spectroscopy
SEMI MF1726 — Practice for Analysis of Crystallographic Perfection of Silicon Wafers
SEMI MF1727 — Practice for Detection of Oxidation Induced Defects in Polished Silicon Wafers
SEMI MF1809 — Guide for Selection and Use for Etching Solutions to Delineate Structural Defects in Silicon
SEMI T3 — Specification for Wafer Box Labels
SEMI T7 — Specification for Back Surface Marking of Double-Side Polished Wafers with a Two-Dimensional Matrix Code Symbol

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