SEMI M59 - Terminology for Silicon Technology
This Standard was technically approved by the Silicon Wafer Global Technical Committee. This edition was approved for publication by the global Audits and Reviews Subcommittee on August 25, 2014. Available at www.semiviews.org and www.semi.org in October 2014; originally published March 2005; previously published February 2011.
Silicon technology underlies the integrated circuit and device industry. To promote common understanding and correct communication between suppliers and customers and others in the field, terms used in this field should be defined.
This Terminology Document covers definitions of terms used in relation to semiconductor silicon crystals and wafers.
This terminology covers general terms describing attributes of silicon wafers as specified in SEMI M1 and other SEMI Standards as outlined in SEMI M1. These attributes include electrical, structural, chemical, and dimensional characteristics of polished and other types of silicon wafers as well as surface defects and contamination. Terminology related only to a single specific test or other attribute is not generally included.
This terminology is applicable for use in connection with research, development, process control, inspection, and procurement of silicon material.
Almost all of the terms for which definitions are listed are nouns. Unless the part of speech is given for any particular term, it can be assumed that the term is a noun.
Referenced SEMI Standards
SEMI M1 — Specifications for Polished Single Crystal Silicon Wafers
SEMI M20 — Practice for Establishing a Wafer Coordinate System
SEMI MF1811 — Guide for Estimating the Power Spectral Density Function and Related Finish Parameters from Surface Profile Data