SEMI M61 - Specification for Silicon Epitaxial Wafers with Buried Layers
This Standard was technically approved by the global Silicon Wafer Technical Committee. This edition was approved for publication by the global Audits and Reviews Subcommittee on February 21, 2012. Available at www.semiviews.org and www.semi.org in June 2012; originally published July 2005.
Some silicon epitaxial wafers are supplied with buried layers under the epitaxial film. This Specification covers the properties of such epitaxial wafers that pertain to the buried layer.
This Specification defines the properties of silicon epitaxial wafers with buried layers that relate to the characteristics of photolithography, buried layer, and buried layer pattern after the deposition of the epitaxial layer.
This Specification is intended to be used with the polished wafer specification (SEMI M1) and the epitaxial wafer specification (SEMI M2), which define the properties of the substrate and the epitaxial layer, respectively.
Referenced SEMI Standards
SEMI M1 — Specifications for Polished Single Crystal Silicon Wafers
SEMI M2 — Specifications for Silicon Epitaxial Wafers for Discrete Device Applications
SEMI M20 — Practice for Establishing a Wafer Coordinate System
SEMI M59 — Terminology for Silicon Technology
SEMI MF26 — Test Methods for Determining the Orientation of a Semiconductive Single Crystal