SEMI M62 - シリコンエピタキシャルウェーハの仕様 -

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Volume(s): Materials
Language: Japanese
Type: Single Standards Download (.pdf)
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Revision: SEMI M62-0413 - Superseded



本スタンダードは,global Silicon Wafer Committeeで技術的に承認されている。現版は2009年1月2日,global Audits and Reviews Subcommitteeにて発行が承認された。2009年2月にwww.semi.orgで,そして2009年3月にCD-ROMで入手可能となる。初版は2005年11月発行,前版は2007年11月に発行された。




Referenced SEMI Standards

SEMI M1 — Specifications for Polished Monocrystalline Silicon Wafers
SEMI M17 — Guide for a Universal Wafer Grid
SEMI M18 — Guider for Developing Specification Forms for Order Entry of Silicon Wafers
SEMI M33 — Test Method for the Determination of Residual Surface Contamination on Silicon Wafers by Means of Total Reflection X-Ray Fluorescence Spectroscopy (TXRF)
SEMI M35 — Guide for Developing Specifications for Silicon Wafer Surface Features Detected by Automated Inspection
SEMI M43 — Guide for Reporting Wafer Nanotopography
SEMI M44 — Guide for Conversion Factors for Interstitial Oxygen in Silicon
SEMI M45 — Provisional Specification for 300-mm Wafer Shipping System
SEMI M53 — Practice for Calibrating Scanning Surface Inspection Systems Using Depositions of Monodisperse Polystyrene Latex Sphere on Unpatterned Semiconductor Wafer Surfaces
SEMI M59 — Terminology for Silicon Technology
SEMI MF95 — Test Method for Thickness of Epitaxial Layers of Silicon on Substrates of the Same Type by Infrared Reflectance
SEMI MF110 — Test Method for Thickness of Epitaxial or Diffused Layers in Silicon by the Angle Lapping and Staining Technique
SEMI MF154 — Guide for Identification of Structures and Contaminants Seen on Specular Silicon Surfaces
SEMI MF374 — Test Method for Sheet Resistance of Silicon Epitaxial Layers Using an Inline Four-Point Probe with the Single Configuration
SEMI MF398 — Test Method for Majority Carrier Concentration in Semiconductors by Measurement of Wavelength of the Plasma Resonance Minimum
SEMI MF523 — Practice for Unaided Visual Inspection of Polished Silicon Slices
SEMI MF525 — Measuring Resistivity of Silicon Wafers Using a Spreading Resistance Probe
SEMI MF534 — Test Method for Bow of Silicon Wafers
SEMI MF657 — Test Method for Measuring Warp and Total Thickness Variation on Silicon Wafers by Noncontact Scanning
SEMI MF672 — Test Method for Measuring Resistivity Profiles Perpendicular to the Surface of a Silicon Wafer Using a Spreading Resistance Probe
SEMI MF723 — Practice for Conversion between Resistivity and Dopant Density for Boron-Doped and Phosphorus-Doped Silicon
SEMI MF1390 — Test Method for Measuring Warp on Silicon Wafers by Automated Non-contact Scanning
SEMI MF1392 — Test Method for Determining Net Carrier Density Profiles in Silicon Wafers by Capacitance-Voltage Measurements with a Mercury Probe
SEMI MF1451 — Test Method for Measuring Sori on Silicon Wafers by Automated Non-contact Scanning
SEMI MF1530 — Test Method for Measuring Flatness, Thickness, and Total Thickness Variation on Silicon Wafers by Automated Non-contact Scanning
SEMI MF1617 — Test Method for Measuring Surface Sodium, Aluminum, Potassium, and Iron on Silicon and Epi Substrates by Secondary Ion Mass Spectrometry
SEMI MF1726 — Practice for Analysis of Crystallographic Perfection of Silicon Wafers
SEMI T3 — Specification for Wafer Box Labels

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