SEMI M64 - Test Method for the EL2 Deep Donor Concentration in Semi-Insulating (SI) Gallium Arsenide Single Crystals by Infrared Absorption Spectroscopy
This Standard was technically approved by the Compound Semiconductor Materials Global Technical Committee. This edition was approved for publication by the global Audits and Reviews Subcommittee on July 6, 2015. Available at www.semiviews.org and www.semi.org in September 2015; originally published March 2006.
The purpose of this Document is to specify a method to measure the concentration of the deep donor EL2 in SI GaAs by infrared absorption.
This Test Method covers a procedure for measuring the concentration of the deep donor EL2 in SI GaAs. This method focuses on improving the accuracy and repeatability of the measurement by standardizing the test conditions and reporting and by routine calibration of the measurement.
This Test Method is intended to cover SI GaAs samples with an electrical resistivity in the range from 1 × 106 to 5 × 108 W ·cm, determined by doping with carbon. The concentration of EL2 must be greater than 5 × 1015 cm-3.
Referenced SEMI Standards
SEMI M39 — Test Method for Measuring Resistivity and Hall Coefficient and Determining Hall Mobility in Semi-Insulating GaAs Single Crystals
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