M07900 - SEMI M79 - Specification for Round 100 mm Polished Monocrystalline Germanium Wafers for Solar Cell Applications

Volume(s): Materials
Language: English
Type: Single Standards Download (.pdf)

This Standard was technically approved by the Compound Semiconductor Materials Global Technical Committee. This edition was approved for publication by the global Audits and Reviews Subcommittee on June 28, 2017. Available at www.semiviews.org and www.semi.org in February 2018; originally published February 2011.


These specifications cover substrate requirements for round 100 mm monocrystalline high-purity germanium wafers used in semiconductor and electronic device manufacturing.


A complete purchase specification may require that additional physical, electrical, and bulk properties be defined. These properties are listed, together with test methods suitable for determining their magnitude where such procedures are documented.


These specifications are directed specifically to germanium wafers with one or both sides polished. Unpolished wafers or wafers with epitaxial films are not covered; however, purchasers of such wafers may find these specifications helpful in defining their requirements.


The material is single crystal germanium (Ge) with the following properties:


Table 1 Basic Properties of Single Crystal Ge



Lattice Parameter

5.658 Å

Crystal Structure



5.3234 g/cm3

Melting Point


Dielectric Constant


Energy Gap

0.661 eV

Thermal Conductivity

0.58 W/cm/°C


For referee purposes, SI (System International, commonly called metric) units shall be used.


Referenced SEMI Standards

SEMI M1 — Specification for Polished Single Crystal Silicon Wafers
SEMI MF26 — Test Method for Determining the Orientation of a Semiconductive Single Crystal
SEMI MF43 — Test Method for Resistivity of Semiconductor Materials
SEMI MF154 — Guide for Identification of Structures and Contaminants Seen on Specular Silicon Surfaces
SEMI MF523 — Practice for Unaided Visual Inspection of Polished Silicon Wafer Surfaces
SEMI MF533 — Test Method for Thickness and Thickness Variation of Silicon Wafers
SEMI MF657 — Test Method for Measuring Warp and Total Thickness Variation on Silicon Wafers by Noncontact Scanning (Withdrawn 0914)
SEMI MF671 — Test Method for Measuring Flat Length on Wafers of Silicon and Other Electronic Materials
SEMI MF673 — Test Method for Measuring Resistivity of Semiconductor Slices or Sheet Resistance of Semiconductor Films with a Noncontact Eddy-Current Gauge
SEMI MF847 — Test Method for Measuring Crystallographic Orientation of Flats on Single Crystal Silicon and Wafers by X-Ray Techniques
SEMI MF928 — Test Method for Edge Contour of Circular Semiconductor Wafers and Rigid Disk Substrates
SEMI MF1390 — Test Method for Measuring Bow and Warp on Silicon Wafers by Automated Noncontact Scanning
SEMI MF1530 — Test Method for Measuring Flatness, Thickness, and Thickness Variation on Silicon Wafers by Automated Noncontact Scanning
SEMI MF2074 — Guide for Measuring Diameter of Silicon and Other Semiconductor Wafers
SEMI T5 — Specification for Alphanumeric Marking of Round Compound Semiconductor Wafers

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