SEMI M83 - Test Method for Determination of Dislocation Etch Pit Density in Monocrystals of III-V Compound Semiconductors -

Abstract

* This Standard has the option to purchase the Current document with a redline document (Current + Redline). The redline document is included with the Current document as a comparison tool to help identify changes that have been made between the Current version and the previous version (Superseded). If differences should exist between the redline document and the Current document, the Current version is the official and authoritative version.

1  Purpose
1.1  The purpose of this Standard is to specify a test method for determination of the dislocation etch pit density of monocrystals and wafers of the III-V compound semiconductors GaAs, InP and GaP.
2  Scope
2.1  This Test Method covers the determination of dislocation etch pit density on round test slices and commercial wafers of III-V compound semiconductors using optical microscopy for identification and registration of dislocation etch pits.
2.2  The dislocation etch pit density is used as a measure for the dislocation density or the crystallographic perfection of a crystal.
2.3  This Test Method describes methods for preparation of slices and wafers of the III-V compound semiconductors GaAs, InP, and GaP with {100} or {111} surfaces by structural etching. These etching procedures are performed to reveal dislocations by formation of etch pits on the surface of the test specimens.
2.4  The described methods for identification and registration of etch pits as well as the procedures for evaluation can be applied also to monocrystalline semiconductor slices or wafers of other materials or orientations, provided that there are suitable structural etching procedures available.
2.5  This Test Method is applicable to material with dislocation densities up to 200,000 cm−2. The resistivity and conductivity type of the material is irrelevant.
NOTICE: SEMI Standards and Safety Guidelines do not purport to address all safety issues associated with their use. It is the responsibility of the users of the Documents to establish appropriate safety and health practices, and determine the applicability of regulatory or other limitations prior to use.

Referenced SEMI Standards (purchase separately)
SEMI M10 — Terminology for Identification of Structures and Features Seen on Gallium Arsenide Wafers
SEMI M20 — Practice for Establishing a Wafer Coordinate System
SEMI M40 — Guide for Measurement of Roughness of Planar Surfaces on Silicon Wafers
SEMI M59 — Terminology for Silicon Technology
SEMI MF26 — Test Method for Determining the Orientation of a Semiconductive Single Crystal
NOTICE: Unless otherwise indicated, all documents cited shall be the latest published versions.

Revision History
SEMI M83-1125 (technical revision)
SEMI M83-0820 (technical revision)
SEMI M83-0913 (technical revision)
SEMI M83-1112 (first  published)

Interested in purchasing additional SEMI Standards? Consider SEMIViews, an online portal with access to over 1000 Standards.

Refund Policy: Due to the nature of our products, SEMI has a no refund/no exchange policy. Please make sure that you have reviewed your order prior to finalizing your purchase. All sales are final.