M08600 - SEMI M86 - Specification for Polished Monocrystalline c-Plane Gallium Nitride Wafers

Volume(s): Materials
Language: English
Type: Single Standards Download (.pdf)
Abstract

This Standard was technically approved by the Compound Semiconductor Materials Global Technical Committee. This edition was approved for publication by the global Audits and Reviews Subcommittee on July 6, 2015 Available at www.semiviews.org and www.semi.org in September 2015.

This Specification covers substrate requirements for monocrystalline high-purity c-plane (0001) gallium nitride wafers used in semiconductor electronic and optical device manufacturing.

A complete purchase specification may require the defining of additional physical, electrical, and bulk properties. These properties are listed, together with test methods suitable for determining their magnitude where such procedures are documented.

This Specification is directed specifically to c-plane (0001) gallium nitride wafers with one or both sides polished. Unpolished wafers or wafers with epitaxial films are not covered; however, purchasers of such wafers may find this Specification helpful in defining their requirements. Hereafter, the term ‘gallium nitride wafers’ will refer to ‘c-plane (0001) gallium nitride wafers.'

The material is single crystal c-plane gallium nitride (GaN). The following properties in Table A1-1 are listed for use as guidelines:

For referee purposes, SI (System International, commonly called metric) units shall be used.

Dimensional requirements are provided for the following categories of polished wafers:

  • Category 1.1 25.4 mm Round Polished Monocrystalline Gallium Nitride Wafers
  • Category 1.2 50.8 mm Round Polished Monocrystalline Gallium Nitride Wafers
  • Category 1.3 76.2 mm Round Polished Monocrystalline Gallium Nitride Wafers
  • Category 1.4 100.0 mm Round Polished Monocrystalline Gallium Nitride Wafers

Referenced SEMI Standards

SEMI M1 — Specification for Polished Single Crystal Silicon Wafers
SEMI M59 — Terminology for Silicon Technology
SEMI MF26 — Test Method for Determining the Orientation of a Semiconductive Single Crystal
SEMI MF43 — Test Methods for Resistivity of Semiconductor Materials
SEMI MF154 — Guide for Identification of Structures and Contaminants Seen on Specular Silicon Surfaces
SEMI MF523 — Practice for Unaided Visual Inspection of Polished Silicon Wafer Surfaces
SEMI MF533 — Test Method for Thickness and Thickness Variation of Silicon Wafers
SEMI MF657 — Test Method for Measuring Warp and Total Thickness Variation on Silicon Wafers by Noncontact Scanning (Withdrawn 0914)
SEMI MF673 — Test Method for Measuring Resistivity of Semiconductor Wafers or Sheet Resistance of Semiconductor Films with a Noncontact Eddy-Current Gauge
SEMI MF1390 — Test Method for Measuring Bow and Warp on Silicon Wafers by Automated Noncontact Scanning
SEMI MF1530 — Test Method for Measuring Flatness, Thickness, and Total Thickness Variation on Silicon Wafers by Automated Noncontact Scanning
SEMI T5 — Specification for Alphanumeric Marking of Round Compound Semiconductor Wafers

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