SEMI M86 - Specification for Polished Monocrystalline c-Plane Gallium Nitride Wafers -

Abstract

This Specification covers substrate requirements for monocrystalline high-purity c-plane (0001) gallium nitride wafers used in semiconductor electronic and optical device manufacturing.
Scope
A complete purchase specification may require the defining of additional physical, electrical, and bulk properties. These properties are listed, together with test methods suitable for determining their magnitude where such procedures are documented.
This Specification is directed specifically to c-plane (0001) gallium nitride wafers with one or both sides polished. Unpolished wafers or wafers with epitaxial films are not covered; however, purchasers of such wafers may find this Specification helpful in defining their requirements. Hereafter, the term ‘gallium nitride wafers’ will refer to ‘c-plane (0001) gallium nitride wafers.’
The material is single crystal c-plane gallium nitride (GaN). The following properties in Table A1-1 are listed for use as guidelines:
For referee purposes, SI (System International, commonly called metric) units shall be used.
Dimensional requirements are provided for the following categories of polished wafers:
Category 1.1 25.4 mm Round Polished Monocrystalline Gallium Nitride Wafers
Category 1.2 50.8 mm Round Polished Monocrystalline Gallium Nitride Wafers
Category 1.3     76.2 mm Round Polished Monocrystalline Gallium Nitride Wafers
Category 1.4     100.0 mm Round Polished Monocrystalline Gallium Nitride Wafers

Referenced SEMI Standards (purchase separately)
SEMI M1 — Specification for Polished Single Crystal Silicon Wafers
SEMI M12 — Specification for Serial Alphanumeric Marking of the Front Surface of Wafers
SEMI M59 — Terminology for Silicon Technology
SEMI MF26 — Test Method for Determining the Orientation of a Semiconductive Single Crystal
SEMI MF43 — Test Methods for Resistivity of Semiconductor Materials
SEMI MF154 — Guide for Identification of Structures and Contaminants Seen on Specular Silicon Surfaces
SEMI MF523 — Practice for Unaided Visual Inspection of Polished Silicon Wafer Surfaces
SEMI MF533 — Test Method for Thickness and Thickness Variation of Silicon Wafers
SEMI MF657 — Test Method for Measuring Warp and Total Thickness Variation on Silicon Wafers by Noncontact Scanning (Withdrawn 0914)
SEMI MF673 — Test Method for Measuring Resistivity of Semiconductor Wafers or Sheet Resistance of Semiconductor Films with a Noncontact Eddy-Current Gauge
SEMI MF1390 — Test Method for Measuring Bow and Warp on Silicon Wafers by Automated Noncontact Scanning
SEMI MF1530 — Test Method for Measuring Flatness, Thickness, and Total Thickness Variation on Silicon Wafers by Automated Noncontact Scanning

Revision History
SEMI M86-0922 (technical revision)
SEMI M86-0915 (first published)

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