M09000 - SEMI M90 - Test Method for Bulk Micro Defect Density and Denuded Zone Width in Annealed Silicon Wafers by Optical Microscopy After Preferential Etching
This Standard defines the measurement method for bulk micro defect (BMD) densities and denuded zone (DZ) width in annealed silicon wafers. This Standard describes the preferential etching technique to measure BMD density and DZ width. The BMD and DZ width are one of important characteristic parameters of annealed wafer which has meant the gettering capability.
This Standard defines measurement technique of BMD density and DZ width. BMD and DZ form in silicon wafers after annealing the wafers with heat treatment. The techniques covered in this Standard are intended to measure BMD density over a range of 107/cm3 to 1010/cm3 and DZ width up to 150 µm.
This Standard applies to mirror-finished annealed silicon samples with a specific resistance of 0.01 Ω·cm or greater.
This Standard defines measurement techniques for BMD density and DZ width using a preferential etching technique.
Referenced SEMI Standards (purchase separately)
SEMI M59 — Terminology for Silicon Technology
SEMI MF1809 — Guide for Selection and Use of Etching Solutions to Delineate Structural Defects in Silicon
SEMI M90-0821 (first published)
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