SEMI M92 - Specification for 4H-SIC Homoepitaxial Wafer -

Abstract

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1  Purpose
1.1  This Specification covers requirements for 4H-SiC homoepitaxial wafers used in power device manufacturing.
1.2  This Specification provides a uniform standard of 4H-SiC homoepitaxial wafers for the suppliers and the customers in the industrial chain.
2  Scope
2.1  This Specification specifies the parameters of 4H-SiC homoepitaxial wafers with a single epitaxial layer grown on an n-type substrate, up to and including 30 µm total thickness.
2.2  Dimensional requirements are provided for the following categories of epitaxial wafers:
• 100.0 mm 4H-SiC epitaxial wafers
• 150.0 mm 4H-SiC epitaxial wafers
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Referenced SEMI Standards (purchase separately)
SEMI M1 — Specification for Polished Single Crystal Silicon Wafers
SEMI M40 — Guide for Measurement of Roughness of Planar Surfaces on Polished Wafers
SEMI M55 — Specification for Polished Monocrystalline Silicon Carbide Wafers
SEMI M59 — Terminology for Silicon Technology
SEMI M81 — Guide to Defects Found on Monocrystalline Silicon Carbide Substrates
SEMI M83 — Test Method for Determination of Dislocation Etch Pit Density in Monocrystals of III-V Compound Semiconductors
SEMI MF26 — Test Method for Determining the Orientation of a Semiconductive Single Crystal
SEMI MF95 — Test Method for Thickness of Lightly Doped Silicon Epitaxial Layers on Heavily Doped Silicon Substrates Using an Infrared Dispersive Spectrophotometer
SEMI MF523 — Practice for Unaided Visual Inspection of Polished Silicon Wafer Surfaces
SEMI MF533 — Test Method for Thickness and Thickness Variation of Silicon Wafers
SEMI MF671 — Test Method for Measuring Flat Length on Wafers of Silicon and Other Electronic Materials
SEMI MF673 — Test Method for Measuring Resistivity of Semiconductor Wafers or Sheet Resistance of Semiconductor Films with a Noncontact Eddy-Current Gauge
SEMI MF847 — Test Method for Measuring Crystallographic Orientation of Flats on Single Crystal Silicon Wafers by X-Ray Techniques
SEMI MF1390 — Test Method for Measuring Bow and Warp on Silicon Wafers by Automated Noncontact Scanning
SEMI MF1392 —Test Method for Determining Net Carrier Density Profiles in Silicon Wafers By Capacitance-Voltage Measurements with a Mercury Probe
SEMI MF1530 — Test Method for Measuring Flatness, Thickness, and Total Thickness Variation on Silicon Wafer by Automated Noncontact Scanning
SEMI MF2074 — Guide for Measuring Diameter of Silicon and Other Semiconductor Wafers
NOTICE: Unless otherwise indicated, all documents cited shall be the latest published versions.

Revision History
SEMI M92-0326 (technical revision)
SEMI M92-0824 (technical revision)
SEMI M92-0423 (first published)

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