SEMI M94 - Specification for Silicon Carbide Engineered Substrates -

Abstract

1  Purpose
1.1  These specifications cover substrate requirements for silicon carbide engineered substrates including high-purity silicon carbide layer of crystallographic polytype 4H used in semiconductor and electronic device manufacturing.
2  Scope
2.1  A complete purchase specification may require the defining of additional physical, electrical, and bulk properties. These properties are listed, together with test methods suitable for determining their magnitude where such procedures are documented.
2.2  These specifications are directed specifically to silicon carbide engineered substrates manufactured by bonding a layer of silicon carbide of crystallographic polytype 4H to a polycrystalline silicon carbide handle substrate.
2.3  For reference purposes, SI (System International, commonly called metric) units shall be used.
2.4  Dimensional requirements are provided for the following categories of polished wafers:
2.4.1  150.0 mm Round Silicon Carbide Engineered Substrates,
2.4.2  200.0 mm Round Silicon Carbide Engineered Substrates.

Referenced SEMI Standards (purchase separately)
SEMI M1 — Specification for Polished Single Crystal Silicon Wafers
SEMI M55 — Specification for Polished Monocrystalline Silicon Carbide Wafers
SEMI M81 — Guide to Defects Found on Monocrystalline Silicon Carbide Substrates
SEMI MF26 — Test Method for Determining the Orientation of a Semiconductive Single Crystal
SEMI MF154 — Guide for Identification of Structures and Contaminants Seen on Specular Silicon Surfaces
SEMI MF671 — Test Method for Measuring Flat Length on Wafers of Silicon and Other Electronic Materials
SEMI MF673 — Test Method for Measuring Resistivity of Semiconductor Wafers or Sheet Resistance of Semiconductor Films with a Noncontact Eddy-Current Gauge
SEMI MF847 — Test Method for Measuring Crystallographic Orientation of Flats on Single Crystal Silicon Wafers by X-Ray Techniques
SEMI MF928 — Test Method for Edge Contour of Circular Semiconductor Wafers and Rigid Disk Substrates
SEMI MF1390 — Test Method for Measuring Bow and Warp on Silicon Wafers by Automated Noncontact Scanning
SEMI MF1530 — Test Method for Measuring Flatness, Thickness, and Total Thickness Variation on Silicon Wafer by Automated Noncontact Scanning
SEMI MF2074 — Guide for Measuring Diameter of Silicon and Other Semiconductor Wafers
SEMI T5 — Specification for Alphanumeric Marking of Round Compound Semiconductor Wafers

Revision History
SEMI M94-0625 (first published)

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