SEMI M95 - Test Method for Net Carrier Density and Resistivity of Silicon Epitaxial Layer by Capacitance-Voltage Measurements with an Evaporated Metal Schottky Diode -

Abstract

1  Purpose
1.1  The net carrier density and the resistivity of silicon epitaxial layers are critical parameters in semiconductor device design. Controlling these values during the semiconductor device manufacturing process is essential in determining the device’s performance through the margin of the semiconductor device design.
1.2  This Test Method can be used for research and development, process control, as well as material specification, evaluation, and acceptance. It is also applicable for characterizing net carrier density or resistivity in polished silicon wafers.
1.3  Currently, SEMI MF1392 describes a test method using mercury as the Schottky electrode metal. However, due to the restrictions imposed by the Minamata Convention on Mercury , which limits the commerce and the industrial use of mercury in the manufacturing process, non-mercury test method is desirable.
2  Scope
2.1  This Test Method covers the measurement of net carrier density and resistivity in epitaxial silicon wafers ranging from approximately 1.0 × 1017 to 4.0 × 1013 carriers/cm−3 (resistivity range from about 0.08 Ω·cm to 110 Ω·cm) in n-type wafers and approximately 2.9 × 1013 to 1.1 × 1014 carriers/cm−3 (resistivity range from about 0.5 Ω·cm to 120 Ω·cm)in p-type wafers.
2.2  This Test Method determines net carrier density and resistivity based on reverse-bias voltage dependence of the capacitance in a Schottky junction diode (hereinafter referred to as C-V method). The Schottky electrode is made of evaporated solid metal applied to an epitaxial silicon layer that is uniformly doped in the depth direction and grown on a mirror-polished silicon substrate.
2.3  As this Test Method is destructive, the data obtained is used to adjust the epitaxial growth system for subsequent production or device fabrication.
2.4  Warnings and precautionary notes regarding potential safety hazards are provided throughout the Standard.

Referenced SEMI Standards (purchase separately)
SEMI E89 — Guide for Measurement System Analysis (MSA)
SEMI F63 — Guide for Ultrapure Water Used in Semiconductor Processing
SEMI M59 — Terminology for Silicon Technology
SEMI MF723 — Practice for Conversion Between Resistivity and Dopant or Carrier Density for Boron-Doped, Phosphorous-Doped, and Arsenic-Doped Silicon
SEMI MF1392 — Test Method for Determining Net Carrier Density Profiles in Silicon Wafers by Capacitance-Voltage Measurements with a Mercury Probe

Revision History
SEMI M95-0925 (first published)

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