SEMI MF110 - Test Method for Thickness of Epitaxial or Diffused Layers in Silicon by the Angle Lapping and Staining Technique -

Member Price: $138.00
Non-Member Price: $180.00

Volume(s): Silicon Materials & Process Control
Language: English
Type: Single Standards Download (.pdf)
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Revision: SEMI MF110-1107 (Reapproved 1123) - Current

Revision

Abstract

 

This Test Method covers a procedure suitable for interlaboratory comparisons of layer thickness. This Test Method is applicable for layers of any resistivity so long as the layer differs from the silicon substrate under it either in conductivity type or by at least one order of magnitude in resistivity. The method described is destructive in nature but is more widely applicable than the alternative infrared method, SEMI MF95.
 

For layers with thicknesses between 1 µm and 25 µm, an interlaboratory precision as defined in ASTM E177, of ±(0.15 T + 0.5 µm) (3S) can be achieved where T represents thickness expressed in micrometers.

 

Referenced SEMI Standards (purchase separately)
SEMI M59 — Terminology for Silicon Technology
SEMI MF42 — Test Method for Conductivity Type of Extrinsic Semiconducting Materials
SEMI MF95 — Test Method for Thickness of Lightly Doped Silicon Epitaxial Layers on Heavily Doped Silicon Substrates Using a Dispersive Infrared Spectrophotometer

 

Revision History
SEMI MF110-1107 (Reapproved 1123)
SEMI MF110-1107 (Reapproved 0718)
SEMI MF110-1107 (Reapproved 0912)
SEMI MF110-1107 (technical revision)
SEMI MF110-1105 (technical revision)
SEMI MF110-00a (first SEMI publication)

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