SEMI MF374 - Test Method for Sheet Resistance of Silicon Epitaxial, Diffused, Polysilicon, and Ion-implanted Layers Using an In-Line Four-Point Probe with the Single-Configuration Procedure -

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Volume(s): Silicon Materials & Process Control
Language: English
Type: Single Standards Download (.pdf)
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Revision: SEMI MF374-0312 (Reapproved 1023) - Current

Revision

Abstract

 

This Test Method covers the direct measurement of the average sheet resistance of thin layers of silicon formed by epitaxy, diffusion, or implantation onto or below the surface of a circular silicon wafer having the opposite conductivity type from the thin layer to be measured or by the deposition of polysilicon over an insulating layer. Measurements are made at the center of the wafer using a single-configuration of the four-point probe. In this configuration, the current is passed through the outer pins and the resulting potential difference is measured with the inner pins.
 

This Test Method applies to circular samples with diameter greater than 15.9 mm (0.625 in.).
 

This Test Method is known to be applicable on films having thickness at least 0.2 µm. It can be used to measure sheet resistance in the range 10 Ω to 5,000 Ω, inclusive.
 

Procedures for preparing the specimen, for measuring its size, and for determining the temperature of the specimen during the measurement are also given. Abbreviated tables of correction factors appropriate to circular geometry are included with the method so that appropriate calculations can be made conveniently.
 

This Test Method includes procedures for checking both the probe head and the electrical measuring apparatus.

 

Referenced SEMI Standards (purchase separately)
SEMI C19 — Specification for Acetone
SEMI C28 — Specification and Guide for Hydrofluoric Acid
SEMI C31 — Specification for Methanol
SEMI C59 — Specification for Nitrogen
SEMI M59 — Terminology for Silicon Technology
SEMI MF42 — Test Method for Conductivity Type of Extrinsic Semiconducting Materials
SEMI MF1529 — Test Method for Sheet Resistance Uniformity Evaluation by In-Line Four-Point Probe with the Dual-Configuration Procedure
SEMI MF2074 — Guide for Measuring Diameter of Silicon and Other Semiconductor Wafers

 

Revision History
SEMI MF374-0312 (Reapproved 1023)
SEMI MF374-0312 (Reapproved 0718)
SEMI MF374-0312 (technical revision)
SEMI MF374-0307 (technical revision)
SEMI MF374-1105 (technical revision)
SEMI MF374-02 (first SEMI publication)

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