MF052500 - SEMI MF525 - Test Method for Measuring Resistivity of Silicon Wafers Using a Spreading Resistance Probe
This Standard was technically approved by the Silicon Wafer Global Technical Committee. This edition was approved for publication by the global Audits and Reviews Subcommittee on February 1, 2018. Available at www.semiviews.org and www.semi.org in July 2018; original edition published by ASTM International as ASTM F525-77T; previously published March 2012.
NOTICE: This Document was reapproved with minor editorial changes.
This Test Method provides means for directly determining the resistivity of a substrate or of an epitaxial layer of thickness greater than 20 times the effective electrical contact radius. Unlike SEMI MF84, SEMI MF374, and SEMI MF1392, it can provide lateral spatial resolution of resistivity on the order of a few micrometers.
This Test Method is intended primarily for use in process control, research, and development applications. In the absence of between laboratory precision data, this Test Method is not recommended for use between supplier and customer unless correlation experiments have been conducted between the parties.
This Test Method covers the measurement of the resistivity of a silicon substrate of known orientation and type, or of a uniform silicon epitaxial layer of known orientation and type that is deposited on a substrate of the same or opposite type. Resistivity of the epitaxial films can be evaluated without the necessity of thin film correction factors provided that the ratio of layer thickness to effective probe contact radius is greater than 20.
This Test Method is comparative in that the resistivity of an unknown specimen is determined by comparing its measured spreading resistance with that of calibration standards of known resistivity. These calibration standards must have the same surface finish, conductivity type, and orientation as the unknown specimen.
This Test Method is intended for use on silicon substrates and epitaxial layers. Within-laboratory precision has been determined through a multilaboratory experiment on substrates having resistivities from 0.01 to 200 Ω·cm.
Referenced SEMI Standards
SEMI E89 — Guide for Measurement System Analysis (MSA)
SEMI M59 — Terminology for Silicon Technology
SEMI MF26 — Test Method for Determining the Orientation of a Semiconductive Single Crystal
SEMI MF42 — Test Method for Conductivity Type of Extrinsic Semiconducting Materials
SEMI MF84 — Test Method for Measuring Resistivity of Silicon Slices with an In-line Four-point Probe
SEMI MF95 — Test Method for Thickness of Lightly Doped Silicon Epitaxial Layers on Heavily Doped Silicon Substrates Using an Infrared Dispersive Spectrophotometer
SEMI MF110 — Test Method for Thickness of Epitaxial or Diffused Layers in Silicon by the Angle Lapping and Staining Technique
SEMI MF374 — Test Method for Sheet Resistance of Silicon Epitaxial, Diffused Polysilicon, and Ion-implanted Layers Using an In-Line Four-Point Probe with the Single-configuration Procedure
SEMI MF1392 — Test Method for Determining Net Carrier Density Profiles in Silicon Wafers by Capacitance-Voltage Measurements With a Mercury Probe
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