MF057600 - SEMI MF576 - Test Method for Measurement of Insulator Thickness and Refractive Index on Silicon Substrates by Ellipsometry

Volume(s): Silicon Materials & Process Control
Language: English
Type: Single Standards Download (.pdf)

This Standard was technically approved by the Silicon Wafer Global Technical Committee. This edition was approved for publication by the global Audits and Reviews Subcommittee on February 1, 2018. Available at and in August 2012; originally published by ASTM International as ASTM F576; previously published August 2012.


Thin insulator films are used in semiconductor device fabrication for isolation, passivation, masking in diffusion processes, and in many applications as a part of the device. Precise knowledge on the part of the device designer and fabricator of actual insulator thickness or index of refraction, or both, provides information useful for the optimization of quantities such as device operating parameters, yield, and reliability.


The measurements are also useful for process control.


Because the multilaboratory tests that have been conducted and reported for this Test Method do not follow the conditions of present-day procedures, it is recommended that the test method be used for materials acceptance purposes only if the parties to the test establish correlation.


This Test Method covers the measurement by ellipsometry of the thickness and refractive index of an insulator grown or deposited on a silicon substrate.


This Test Method uses monochromatic light.


This Test Method is nondestructive and may be used to measure the thickness and refractive index of any film not absorbing light at the measurement wavelength on any substrate (1) not transparent to light at the measurement wavelength, and (2) of a material for which both the refractive index and the absorption coefficient are known at the measurement wavelength.


Two procedures for computing the results are provided. If the graphical procedure is used, the measuring wavelength shall be either 546.1 or 632.8 nm, and the angle of incidence shall be 70 ± 0.1°.


Referenced SEMI Standards

SEMI C19 — Specification for Acetone

SEMI C31 — Specification for Methanol

SEMI M59 — Terminology for Silicon Technology

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