SEMI MF674 - Practice for Preparing Silicon for Spreading Resistance Measurements -

Abstract

Resistivity is probably the single most important parameter for the characterization of silicon starting material for semiconductor device fabrication. Spreading resistance measurements are used to measure resistivity variations in raw silicon crystals and completed semiconductor devices. The reproducibility of spreading resistance measurements on silicon specimens is known to depend on the manner of specimen preparation. The interpretation of spreading resistance measurements depends in turn on the reproducibility of test specimen measurements and on the reproducibility of calibration specimen measurements.

 

The procedures given are intended to confer a high degree of reproducibility to spreading resistance measurements, and offer improvement over other preparation techniques.

This Practice covers the surface preparation of silicon samples using diamond polishing prior to measurement of resistivity variations by the spreading resistance technique.

 

Separate practices are given for preparation of large-area specimens for measurement of lateral resistivity variations and for preparation of bevel-sectioned specimens (usually small chips) for measurement of vertical variations of resistivity (depth profiling).

The two practices are covered as follows: Front-Surface Diamond Polishing and Diamond Bevel Polishing.

 

Referenced SEMI Standards (purchase separately)

SEMI M59 — Terminology for Silicon Technology

 

Revision History

SEMI MF674-0316 (Reapproved 0921)

SEMI MF674-0316 (technical revision)

SEMI MF674-0705 (Reapproved 0611)

SEMI MF674-0705 (technical revision)

SEMI MF674-92 (Reapproved 1999) (first SEMI publication)

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