MF072300 - SEMI MF723 - Practice for Conversion Between Resistivity and Dopant or Carrier Density for Boron-Doped, Phosphorous-Doped, and Arsenic-Doped Silicon

Volume(s): Silicon Materials & Process Control
Language: English
Type: Single Standards Download (.pdf)
Abstract


Dopant density and resistivity of silicon are two important acceptance parameters used in the interchange of material by consumers and producers in the semiconductor industry. Therefore, a particular method of converting from dopant density to resistivity and vice versa must be available since some test methods measure resistivity while others measure dopant density.

 

In addition, there are occasions when conversion from resistivity to carrier density is required. These conversions are useful in mathematical modeling of semiconductor processing and devices.

 

This Practice describes conversions between dopant density and resistivity for arsenic-, boron- and phosphorus- doped single crystal silicon and conversions from resistivity to carrier density for boron- and phosphorus doped single crystal silicon at 23°C.

 

Referenced SEMI Standards (purchase separately)

SEMI M59 — Terminology for Silicon Technology

SEMI MF84 — Test Method for Measuring Resistivity of Silicon Wafers with an In-Line Four-Point Probe

 

Revision History

SEMI MF723-0307E (Reapproved 0921)

SEMI MF723-0307E (Reapproved 0412)E (editorial revision)

SEMI MF723-0307E (Reapproved 0412)

SEMI MF723-0307E (editorial revision)

SEMI MF723-0307 (technical revision)

SEMI MF723-0706 (technical revision)

SEMI MF723-1105 (technical revision)

SEMI MF723-00 (first SEMI publication)

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