SEMI MF950 - Test Method for Measuring the Depth of Crystal Damage of a Mechanically Worked Silicon Wafer Surface by Angle Polished and Defect Etching -

Abstract

This Test Method covers a technique to measure the depth of damage, on or beneath the surface of silicon wafers prior to any heat treatment of the wafer. Such damage results from mechanical surface treatments such as sawing, lapping, grinding, sandblasting, and shot peening.

The damage is revealed by a preferential etch that removes silicon in the region of the deformation. Preferential etching occurs because the chemical potential in the region of the deformation is changed by the stress fields associated with the deformation. The depth of damage is expressed in micrometers.

The measurement is destructive because a specimen is prepared from a section of a silicon wafer.

Depth of damage can be measured in the range of 5 µm to 200 µm using this method.

Referenced SEMI Standards (purchase separately)
SEMI M59 — Terminology for Silicon Technology
SEMI MF672 — Test Method for Measuring Resistivity Profiles Perpendicular to the Surface of a Silicon Wafer Using a Spreading Resistance Probe
SEMI MF1809 — Guide for Selection and Use for Etching Solutions to Delineate Structural Defects in Silicon

Revision History
SEMI MF950-1107 (Reapproved 1023)
SEMI MF950-1107 (Reapproved 0718)
SEMI MF950-1107 (Reapproved 0912)
SEMI MF950-1107 (technical revision)
SEMI MF950-02 (first SEMI publication)

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