MF095100 - SEMI MF951 - Test Method for Determination of Radial Interstitial Oxygen Variation in Silicon Wafers

Volume(s): Silicon Materials & Process Control
Language: English
Type: Single Standards Download (.pdf)

The presence of oxygen can be beneficial to certain manufacturing operations by preventing the formation of process-induced defects. To the extent that this is true, it becomes important that the oxygen be uniformly distributed over the entire slice.


Multiple test plans are included to satisfy a variety of requirements. The characteristic shape and magnitude of oxygen concentration distributions in crystals are functions of the crystal growth process. Although the specified test plans are intended to cover oxygen concentration distributions which are typically found, other distributions may occur. In such cases, it may be necessary to use test positions other than those specified in order to adequately describe the distribution pattern.


This Test Method may be used for process control, research and development, and materials acceptance purposes. In the absence of an interlaboratory evaluation of the precision of this Test Method, its use for materials acceptance is not recommended unless the parties involved establish the degree of correlation which can be expected.

This Test Method covers test site selection and data reduction procedures for radial variation of the interstitial oxygen concentration in silicon slices typically used in the manufacture of microelectronic semiconductor devices.


Referenced SEMI Standards (purchase separately)

SEMI MF81 — Test Method for Measuring Radial Resistivity Variation on Silicon Wafers

SEMI MF533 — Test Method for Thickness and Thickness Variation of Silicon Wafers

SEMI MF1188 — Test Method for Interstitial Oxygen Content of Silicon by Infrared Absorption with Short Baseline

SEMI MF1366 — Test Method for Measuring Oxygen Concentration in Heavily Doped Silicon Substrates by Secondary Ion Mass Spectrometry

SEMI MF1619 — Test Method for Measurement of Interstitial Oxygen Content of Silicon Wafers by Infrared Absorption Spectroscopy with p-Polarized Radiation Incident at the Brewster Angle


Revision History

SEMI MF951-0305 (Reapproved 0222)

SEMI MF951-0305 (Reapproved 0316)

SEMI MF951-0305 (Reapproved 0211)

SEMI MF951-0305 (technical revision)

SEMI MF951-02 (first SEMI publication)

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