- SEMI MF951 - Test Method for Determination of Radial Interstitial Oxygen Variation in Silicon Wafers

Volume(s): Silicon Materials & Process Control
Language: English
Type: Single Standards Download (.pdf)

This Standard was technically approved by the Silicon Wafer Global Technical Committee. This edition was approved for publication by the global Audits and Reviews Subcommittee on February 1, 2016. Available at www.semiviews.org and www.semi.org in March 2016; originally published by ASTM International as ASTM F951-85; previously published February 2011.


NOTICE: This Document was reapproved with minor editorial changes.


The presence of oxygen can be beneficial to certain manufacturing operations by preventing the formation of process-induced defects. To the extent that this is true, it becomes important that the oxygen be uniformly distributed over the entire slice.


Multiple test plans are included to satisfy a variety of requirements. The characteristic shape and magnitude of oxygen concentration distributions in crystals are functions of the crystal growth process. Although the specified test plans are intended to cover oxygen concentration distributions which are typically found, other distributions may occur. In such cases, it may be necessary to use test positions other than those specified in order to adequately describe the distribution pattern.


This Test Method may be used for process control, research and development, and materials acceptance purposes. In the absence of an interlaboratory evaluation of the precision of this test method, its use for materials acceptance is not recommended unless the parties involved establish the degree of correlation which can be expected (see § 12).


This Test Method covers test site selection and data reduction procedures for radial variation of the interstitial oxygen concentration in silicon slices typically used in the manufacture of microelectronic semiconductor devices.


This Test Method is intended as both a referee and production test through selection of an appropriate test position plan.


The interstitial oxygen content may be measured in accordance with SEMI MF1188, SEMI MF1619, DIN 50438-1, JEITA EM-3504, or any other procedure agreed upon by the parties to the test.


Acceptable thickness and surface finish for the test specimens are specified in the applicable test methods. This Test Method is suitable for use on chemically etched, single-side polished and double-side polished silicon wafers or slices with no surface defects that could adversely change infrared radiation transmission through the test specimen (subsequently called slice), provided that appropriate test methods for oxygen content are selected.


Referenced SEMI Standards

SEMI MF81 — Test Method for Measuring Radial Resistivity Variation on Silicon Wafers
SEMI MF533 — Test Method for Thickness and Thickness Variation of Silicon Wafers
SEMI MF1188 — Test Method for Interstitial Oxygen Content of Silicon by Infrared Absorption with Short Baseline
SEMI MF1366 — Test Method for Measuring Oxygen Concentration in Heavily Doped Silicon Substrates by Secondary Ion Mass Spectrometry
SEMI MF1619 — Test Method for Measurement of Interstitial Oxygen Content of Silicon Wafers by Infrared Absorption Spectroscopy with p-Polarized Radiation Incident at the Brewster Angle

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