MF115300 - SEMI MF1153 - Test Method for Characterization of Metal-Oxide Silicon (MOS) Structures by Capacitance-Voltage Measurements

Volume(s): Silicon Materials & Process Control
Language: English
Type: Single Standards Download (.pdf)

Net carrier density present near the silicon-oxide interface may constitute an important acceptance requirement. Where there is not significant compensation by impurities of the opposite conductivity type, the material resistivity may be determined from this carrier density using SEMI MF723.


Flatband voltage is an important parameter in the manufacture of MOS devices. Its value is dependent on the work function difference between the silicon and the metal field plate, interface trapped charge, and fixed or trapped charge distributed within the oxide. It can be an indicator of anomalies in these values.


Instability of the flatband voltage of an MOS structure subjected to voltage stress at elevated temperatures is a measure of the mobile ionic charge density within the oxide. Most device applications require that mobile ionic charge be minimized.


The presence of unwanted subsurface p-n junctions may have deleterious effects on device operation.


This Test Method may be employed for qualification of furnaces or other semiconductor device-processing equipment where such qualification depends on the determination of contamination resulting from high mobile ionic charge density.


This Test Method covers measurement of metal-oxide-silicon (MOS) structures for flatband capacitance, flatband voltage, average carrier density within a depletion length of the semiconductor-oxide interface, displacement of flatband voltage after application of voltage stress at elevated temperatures, mobile ionic charge contamination, and total fixed charge density. Also covered is a procedure for detecting the presence of p-n junctions in the subsurface region of bulk or epitaxial silicon.


Referenced SEMI Standards (purchase separately)

SEMI M59 — Terminology for Silicon Technology

SEMI MF576 — Test Method for Measurement of Insulator Thickness and Refractive Index on Silicon Substrates by Ellipsometry

SEMI MF723 — Practice for Conversion Between Resistivity and Dopant or Carrier Density for Boron-Doped, Phosphorus-Doped, and Arsenic-Doped Silicon


Revision History

SEMI MF1153-1110 (Reapproved 0222)

SEMI MF1153-1110 (Reapproved 1015)

SEMI MF1153-1110 (technical revision)

SEMI MF1153-1106 (technical revision)

SEMI MF1153-92 (Reapproved 2002) (first SEMI publication)

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