SEMI MF1366 - Test Method for Measuring Oxygen Concentration in Heavily Doped Silicon Substrates by Secondary Ion Mass Spectrometry -

Abstract

This Test Method covers the determination of total oxygen concentration in the bulk of single crystal silicon substrates using SIMS.
 

This Test Method can be used for silicon in which the dopant concentrations are less than 0.2% 
(1 atoms/cm3 × 1020 atoms/cm3) for boron, antimony, arsenic, and phosphorus (refer to SEMI MF723). This Test Method is especially applicable for silicon that has resistivity between 0.0012 Ωcm and 1 Ωcm for p-type silicon and between 0.008 Ωcm and 0.2 Ωcm for n-type silicon (refer to SEMI MF43).
 

This Test Method can be used for silicon in which the oxygen content is greater than the SIMS instrumental oxygen background as measured in a float zone silicon sample, but the test method has a useful precision especially when the oxygen content is much greater (approximately 10× to 20×) than the measured oxygen background in the float zone silicon.
 

This Test Method is complementary to infrared absorption spectroscopy that can be used for the measurement of interstitial oxygen in silicon that has resistivity greater than 1 Ωcm for p-type silicon and greater than 0.1 Ωcm for n-type silicon (refer to SEMI MF1188). The infrared absorption measurement can be extended to between 0.02  Ωcm and 0.1 Ωcm for n-type silicon with minor changes in the measurement procedure. 
 

In principle, different sample surfaces can be used, but the precision estimate was taken from data on chemical-mechanical polished surfaces.

Referenced SEMI Standards (purchase separately)
SEMI M59 — Terminology for Silicon Technology
SEMI MF43 — Test Method for Resistivity of Semiconductor Materials
SEMI MF723 — Practice for Conversion Between Resistivity and Dopant Density for Arsenic-Doped, Boron-Doped, and Phosphorus-Doped Silicon
SEMI MF1188 — Test Method for Interstitial Atomic Oxygen Content of Silicon by Infrared Absorption

Revision History
SEMI MF1366-0308 (Reapproved 1023)
SEMI MF1366-0308 (Reapproved 1018)
SEMI MF1366-0308 (Reapproved 0413)
SEMI MF1366-0308 (technical revision)
SEMI MF1366-1107 (technical revision)
SEMI MF1366-0305 (technical revision)
SEMI MF1366-02 (first SEMI publication)

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